MT46H64M16LFCK-75:A Micron Technology Inc, MT46H64M16LFCK-75:A Datasheet - Page 64

• Manufacturer Part Number: MT46H64M16LFCK-75:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-75:A

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 28: READ-to-PRECHARGE
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQ
DQS
DQ
CK#
CK#
CK
CK
4
4
Notes:
Banka,
Col n
Banka,
Col n
READ
READ
T0
T0
1. BL = 4, or an interrupted burst of 8 or 16.
2. PRE = PRECHARGE command.
3. ACT = ACTIVE command.
4. D
5. Shown with nominal
6. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out.
7. A READ command with auto precharge enabled, provided
1
1
cause a precharge to be performed at x number of clock cycles after the READ com-
mand, where x = BL/2.
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
T1n
(a or all)
(a or all)
D
t
Bank a,
Bank a,
AC,
OUT
n
T2
T2
PRE
PRE
t
2
64
2
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
OUT
n
D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n + 2
T3
NOP
T3
NOP
OUT
t
DQSQ.
D
n + 1
Don’t Care
OUT
T3n
t
t
T3n
D
n + 3
RP
RP
OUT
D
n + 2
OUT
T4
T4
NOP
NOP
D
n + 3
OUT
t
RAS (MIN) is met, would
Transitioning Data
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READ Operation
Bank a,
Bank a,
T5
T5
ACT
Row
ACT
Row
3
3