MT18HTF25672PY-800E1 Micron Technology Inc, MT18HTF25672PY-800E1 Datasheet
MT18HTF25672PY-800E1
Specifications of MT18HTF25672PY-800E1
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MT18HTF25672PY-800E1 Summary of contents
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... MT18HTF6472 – 512MB MT18HTF12872(P) – 1GB MT18HTF25672(P) – 2GB For component data sheets, refer to Micron's Web site: Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2- 5300, or PC2-6400 • Supports ECC error detection and correction • ...
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... Part Numbers and Timing Parameters – 1GB Modules Base device: MT47H128M4, 2 Part Number Module Density MT18HTF12872(P)Y-80E__ MT18HTF12872(P)Y-800__ MT18HTF12872(P)Y-667__ MT18HTF12872(P)Y-53E__ MT18HTF12872(P)Y-40E__ Table 5: Part Numbers and Timing Paramters – 2GB Modules Base device: MT47H256M4, 2 Part Number Module Density MT18HTF25672(P)Y-80E__ MT18HTF25672(P)Y-800__ MT18HTF25672(P)Y-667__ MT18HTF25672(P)Y-53E__ MT18HTF25672(P)Y-40E__ Notes: 1. Data sheets for the base devices can be found on Micron’ ...
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Pin Assignments and Descriptions Table 6: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 64 5 ...
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... Data input/output: Bidirectional data bus. (SSTL_18) CB0–CB7 I/O Check bits. (SSTL_18) SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module Output Parity error found on the address and control bus (open drain) V ...
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Functional Block Diagram Figure 2: Functional Block Diagram V SS RS0# DQS2 DQS2# DQS3 DQS3# U6, U17 S0# RS0#: DDR2 SDRAM e BA0–BA1/BA2 RBA0 – RBA1/RBA2: DDR2 SDRAM g A0–A12/A13 RA0–RA12/RA13: ...
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... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
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... Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in the operational sections of this specifica- tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability ...
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I Specifications DD Table 10: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H64M4 DDR2 SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet Parameter/Condition Operating one bank ...
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Table 11: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...
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Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 2GB DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Operating one bank ...
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Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 2GB DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Operating one bank ...
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... Notes: 1. Timing and switching specifications for the register listed above are critical for proper operation of the DDR2 SDRAM registered DIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this regis- ter is available in JEDEC standard JESD82. ...
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Table 15: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V V Input voltage (limits high-level input voltage DC low-level input voltage V Input differential-pair cross V voltage ...
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Serial Presence-Detect Table 17: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...
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... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...
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... Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery time, ...
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... Module serial number 99–127 Reserved for manufacturer-specific data 128–255 Reserved for customer-specific data Notes: 1. The 512MB module is not available in -80E, -800, or -667 speed grades. 2. The DDR2 device specification is PDF: 09005aef80e5e752/Source: 09005aef80e5e626 HTF18C64_128_256x72.fm - Rev. E 3/07 EN 512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Entry (Version) Release 1 ...
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... TYP Back view U17 U15 U16 U18 U19 5.0 (0.197) TYP 63.0 (2.48) TYP ® 18 Module Dimensions U10 U11 U12 17.78 (0.700) TYP 10.00 (0.394) TYP PIN 120 U20 U21 U22 PIN 121 Micron Technology, Inc., reserves the right to change products or specifications without notice. ...