MT8VDDT6464AG-265DB Micron Technology Inc, MT8VDDT6464AG-265DB Datasheet - Page 2

• Manufacturer Part Number: MT8VDDT6464AG-265DB
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AG-265DB

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.16A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80867ab3/Source: 09005aef80867a99
DD8C32_64x64A.fm - Rev. J 8/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT8VDDT3264AG-40B__
MT8VDDT3264AY-40B__
MT8VDDT3264AG-335__
MT8VDDT3264AY-335__
MT8VDDT3264AG-262__
MT8VDDT3264AG-26A__
MT8VDDT3264AG-265__
MT8VDDT3264AY-265__
MT8VDDT6464AG-40B__
MT8VDDT6464AY-40B__
MT8VDDT6464AG-335__
MT8VDDT6464AY-335__
MT8VDDT6464AG-262__
MT8VDDT6464AG-26A__
MT8VDDT6464AG-265__
MT8VDDT6464AY-265__
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 256MB
Base device: MT46V32M8,
Part Numbers and Timing Parameters – 512MB
Base device: MT46V64M8,
2
2
Nomenclature
Notes:
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes. Example: MT8VDDT3264AY-335G6.
Module
Density
Module
Density
256MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
CL = 3
400
1
1
–
–
–
–
256Mb DDR SDRAM
512Mb DDR SDRAM
t
Data Rate (MT/s)
RCD and
Configuration
Configuration
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
CL = 2.5
333
333
266
266
266
t
RP for -335 modules show 18ns to align with industry specifications;
2
256Mb (32 Meg x 8)
CL = 2
266
266
266
266
200
8K (A0–A12)
4 (BA0, BA1)
Bandwidth
Bandwidth
1K (A0–A9)
Module
Module
256MB
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
1 (S0#)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K
t
(ns)
RCD
15
18
15
20
20
Memory Clock/
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
15
20
20
RP
©2003 Micron Technology, Inc. All rights reserved.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
512MB
1 (S0#)
(ns)
8K
t
(CL-
(CL-
55
60
60
65
65
RC
Clock Cycles
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
2-2-2
2-3-3
3-3-3
3-3-3
2-2-2
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1