MT9HTF6472AY53EA1 Micron Technology Inc, MT9HTF6472AY53EA1 Datasheet - Page 15

• Manufacturer Part Number: MT9HTF6472AY53EA1
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472AY53EA1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.305A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 12: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
2700
-800
2160
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2025
-53E
Specifications
-40E
1980
Units
mA