MT8VDDT6464HDG-265C1 Micron Technology Inc, MT8VDDT6464HDG-265C1 Datasheet

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MT8VDDT6464HDG-265C1

Manufacturer Part Number
MT8VDDT6464HDG-265C1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8VDDT6464HDG-265C1

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
600mA
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant
DDR SDRAM SODIMM
MT8VDDT3264HD – 256MB
MT8VDDT6464HD – 512MB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Dual rank
• Gold edge contacts
Table 1:
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C32_64x64HD.fm - Rev. E 11/08 EN
(SODIMM)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
1
t
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
RCD and
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
1
Figure 1:
Notes: 1. Not recommended for new designs.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (lead-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
20
20
A
A
2
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
20
20
©2004 Micron Technology, Inc. All rights reserved.
RP
1
(ns)
t
55
60
65
65
1
RC
Marking
Features
None
-40B
-26A
-335
-265
Notes
G
Y
I
1

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MT8VDDT6464HDG-265C1 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 200-Pin SODIMM (MO-224) Marking 2 ≤ +70°C) None A ≤ +85°C) ...

Page 2

... MT8VDDT6464HDY-40B__ 512MB 512MB MT8VDDT6464HDG-335__ 512MB MT8VDDT6464HDY-335__ MT8VDDT6464HDG-265__ 512MB MT8VDDT6464HDY-265__ 512MB Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 4

... Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM power supply: +2.3V to +3.6V. Supply SSTL_2 reference voltage (V Supply Ground. – No connect: These pins are not connected on the module. 4 Pin Assignments and Descriptions 2 C bus. data. Edge-aligned with read data. Input with /2). ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# CS# DQS0 UDQS DM0 UDM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ U1 DQ6 DQ DQ7 DQ DQS1 LDQS DM1 LDM DQ8 DQ DQ9 DQ ...

Page 6

... Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 9

... Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C32_64x64HD ...

Page 10

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C32_64x64HD.fm - Rev. E 11/08 EN ...

Page 11

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C32_64x64HD.fm - Rev. E 11/08 EN ...

Page 12

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 13

... Pin 1 63.60 (2.504) TYP Back view 11.40 (0.45) 47.40 (1.87) TYP 15.35 (0.6) 13 Module Dimensions U9 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 4.0 (0.157) TYP Pin 2 TYP TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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