MT8HTF6464AY-53ED7 Micron Technology Inc, MT8HTF6464AY-53ED7 Datasheet - Page 5

• Manufacturer Part Number: MT8HTF6464AY-53ED7
• Manufacturer: Micron Technology Inc

Specifications of MT8HTF6464AY-53ED7

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.16A
• Number Of Elements: 8
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Pin Descriptions
Table 7: Pin Descriptions
PDF: 09005aef80e2ff8d
htf8c32_64_128x64aypdf - Rev. G 3/10 EN
RAS#, CAS#, WE#
Symbol
RESET#
DQS#x
Par_In
DQSx,
ODTx
DMx,
CK#x
CKEx
CKx,
DQx
BAx
SAx
CBx
S#x
SCL
Ax
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
The pin description table below is a comprehensive list of all possible pins for all DDR2
modules. All pins listed may not be supported on this module. See Pin Assignments for
information specific to this module.
256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Description
Address inputs: Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments Table for density-specific
addressing information.
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, and MR3) is loaded during the LOAD MODE command.
Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DDR2 SDRAM.
Data mask (x8 devices only): DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH, along with that input data, during a write ac-
cess. Although DM pins are input-only, DM loading is designed to match that of the
DQ and DQS pins.
On-die termination: Enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DDR2 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input
will be ignored if disabled via the LOAD MODE command.
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This
signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z.
Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.
Serial address inputs: Used to configure the SPD EEPROM address range on the I
bus.
Serial clock for SPD EEPROM: Used to synchronize communication to and from the
SPD EEPROM on the I
Check bits. Used for system error detection and correction.
Data input/output: Bidirectional data bus.
Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the con-
troller. Output with read data; input with write data for source synchronous opera-
tion. DQS# is only used when differential data strobe mode is enabled via the LOAD
MODE command.
2
C bus.
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Pin Descriptions
2
C