BTS3256DXT Infineon Technologies, BTS3256DXT Datasheet
BTS3256DXT
Specifications of BTS3256DXT
Related parts for BTS3256DXT
BTS3256DXT Summary of contents
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... ™ Smart Low Side Power Switch smart power single channel low side switch with restart and variable slew rate Rev. 1.0, 2009-05- ...
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... Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8.4 Electrical Characteristics - Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 9 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 9.1 Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 9.2 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Datasheet Smart Low Side Power Switch HITFET - BTS 3256D 2 Table of Contents Rev. 1.0, 2009-05-05 ...
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... The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. Basic Features • Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation • Max. switching Frequency 12kHz • Clear detection of digital fault signal also during fast PWM operation due to restart delay time • ...
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... At high dynamic overload conditions, such as short circuit, the device will either turn off immediately due to the implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay time. Shutdown of the device is triggered if the power dissipation during limitation is above the over power threshold ...
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... Datasheet V S Under Over- Over- voltage voltage temperature lockout Protection Protection Short Overload circuit Protection Protection SRP Fault GND I GND 5 Smart Low Side Power Switch HITFET - BTS 3256D BTS 3256D Block Diagram Drain GND BlockDiagram.emf Drain V D Terms.emf Rev. 1.0, 2009-05-05 ...
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... Slew Rate Preset; Used to define slew rate, see 5 GND Ground; Power ground, pin connection needs to carry the load current from Drain Datasheet BTS 3256D (top view ) 6 ( Tab) 6 Smart Low Side Power Switch HITFET - BTS 3256D Pin Configuration GND 5 SRP 4 Drain 3 IN ...
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... Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. 3) Active clamped. 4) The Device can not be switched SRP Pin is driven by an internal current source, so active driving from outside is not required,it may affect lifetime and could ...
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... Thermal Resistance Pos. Parameter 1) 4.3.1 Junction to Case 1) 4.3.2 Junction to ambient 1) Not subject to production test, specified by design Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Max – ...
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... Pulse D = tp/T, T thJA p Device drain connection. PCB mounted vertical without blown air. Datasheet Single pulse - °C a 1.5 mm epoxy PCB FR4 with Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics Zth.emf 2 (one layer thick) copper area for Rev. 1.0, 2009-05-05 ...
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... Input Circuit Figure 7 shows the input circuit of the BTS 3256D. It’s ensured that the device switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the BTS 3256D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis Fault Information” ...
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... IN/Fault 20µA : 100µA GND Figure 7 Input Circuit Datasheet 1.0mA : 3.0mA 11 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage input.emf Rev. 1.0, 2009-05-05 ...
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... UV-switch-off hysteresis Digital Input / Fault Feedback 5.3.4 Low level voltage 5.3.5 High level voltage 5.3.6 Input pull down current 5.3.7 Input pull down current in Fault Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max. V – – 5.6 SUVON 4.0 – ...
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... Figure 9 Typical On-State Resistance R Datasheet . Figure 8 J typ 100 125 150 175 T [ ° DSon typ high, T DSon Smart Low Side Power Switch HITFET - BTS 3256D Power Stage shows this dependence for the typical rdson_Tj.emf = high 30 rdson_Vs.emf = 25 °C ambient Rev. 1.0, 2009-05-05 ...
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... Output Timings and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 10 IN High Low ond |dv/dt|shaping 10 % Figure 10 Definition of Power Output Timing for Resistive Load In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow slew rate settings ...
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... BTS 3256D can handle. For maximum single avalanche energy please also refer to E Datasheet Overtemperature or short circuit detected ------ – value Smart Low Side Power Switch HITFET - BTS 3256D Power Stage inductive_output_clamp .emf “Energies” on Page 7. Rev. 1.0, 2009-05-05 ...
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... Figure 13 Maximum allowed inductance values for single switch off (EAS 150 ° j,start Datasheet Max =30V Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 50 EAS .emf Rev. 1.0, 2009-05-05 ...
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... Limit Values Min. Typ. R – 10 DS(on) – 7.5 8.7 D(nom D(ISO) I – 6 DSS – 1 – init – ond_fast t – 11 on_fast offd_fast 17 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max. – high 150 high – < 150 SMD A = high ...
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... D on_fast 1.2 2.2 D off_fast |dV/dt| – 0.66 shaping_fast t – 22 ond_slow t – 85 on_slow – offd_slow t 40 150 off_slow 18 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max 2 OPEN; SRP 13 see Figure OPEN; R SRP 13.5 V; ...
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... Datasheet Symbol Limit Values Min. Typ 0.08 0.2 D on_slow 0.08 0.2 D off_slow |dV/dt| – 0.088 shaping_slow -0.3 -1 1.5 mm; 35 Cu Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max GND; SRP 13 see Figure GND; R SRP ...
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... Readout of feedback information and XOR logic in micro 7.2 Adjustable Slew Rate In order to optimize electromagnitic emission, the switching speed of the MOSFET can be adjusted by connecting an external resistor between SRP pin and GND. This allows for balancing between electromagnetic emissions and power dissipation. R represents the minimum slew rate Slew rate ...
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... Slew rate 15k 0.7 Slew rate 30k 1.2 Slew rate max SRP 21 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis Unit Conditions Typ. Max. 0.2 0.6 V/µ Ohm SRP ohmic load 0.6 – V/µs ...
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... Thermal Protection The device is protected against over temperature resulting from overload and / or bad cooling conditions. The BTS 3256D has a thermal restart function. When overheating occurs, the device switches off for the restart delay time t . After this time the device restarts if the temperature is below threshold and the IN has logic high restart level ...
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... The device stays on, because the load current returns to normal condition before t In the second switch on, the short circuit is permanent and the device switches OFF after maximum limiting time, stays OFF for the blanking time regardless of the input pin condition and then stays OFF according to the IN pin low condition ...
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... Figure 18 Short Circuit during On State, Typical Behavior for Ohmic Loads The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in The test setup for short circuit characterization is shown in Therefore it can be assumed that the micro controller and device GND connection have a low impedance. All ...
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... Not subject to production test, specified by design case of inductive loads the device needs to increase the VDS voltage during current limitation. This can trigger the over Power protection switch off earlier as Datasheet Smart Low Side Power Switch Symbol Limit Values Min ...
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... 100µA GND GND to switch ON. INH,min > INFault_min µC V INH,min µC 26 Smart Low Side Power Switch HITFET - BTS 3256D Application Information BTS3256 Fault information 1.0mA SRP : 3.0mA Fault_R1dim.emf while the device fault current is flowing. IN driving stage driving stage Rev. 1.0, 2009-05-05 ...
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... For a typical 3.3V micro controller a range from 4 2 suitable. 9.2 Further Application Information • For further information you may contact Datasheet L,max can be used. http://www.infineon.com/hitfet 27 Smart Low Side Power Switch HITFET - BTS 3256D Application Information Rev. 1.0, 2009-05-05 ...
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... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 -0.10 ±0.1 A 5x0.6 ±0.1 1.14 0. Smart Low Side Power Switch HITFET - BTS 3256D Package Outlines +0.05 2.3 -0.10 +0.08 B 0.9 -0.04 1 ±0.1 0...0.15 +0.08 ...
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... Revision History Version Date Changes Rev. 1.0 2009-05-05 released Datasheet Datasheet Smart Low Side Power Switch HITFET - BTS 3256D 29 Revision History Rev. 1.0, 2009-05-05 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...