MC9S08QD2CSC Freescale, MC9S08QD2CSC Datasheet - Page 40

MC9S08QD2CSC

Manufacturer Part Number
MC9S08QD2CSC
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S08QD2CSC

Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
8MHz
Total Internal Ram Size
128Byte
# I/os (max)
4
Number Of Timers - General Purpose
3
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2.7V
On-chip Adc
4-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Program Memory Type
Flash
Program Memory Size
2KB
Lead Free Status / RoHS Status
Compliant

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0
Chapter 4 Memory Map and Register Definition
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
40
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all 0s.
MC9S08QD4 Series MCU Data Sheet, Rev. 6
Freescale Semiconductor

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