MCIMX287CVM4B Freescale, MCIMX287CVM4B Datasheet - Page 12

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MCIMX287CVM4B

Manufacturer Part Number
MCIMX287CVM4B
Description
Manufacturer
Freescale
Datasheet

Specifications of MCIMX287CVM4B

Lead Free Status / RoHS Status
Compliant

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1
2
3
Table 7
Note that HBM and CDM pass ESD testing per JEDEC spec, JESD22-A114A115.
12
EMI Digital I/O Supply
DC-DC Converter
Input Voltage on Any Digital I/O Pin Relative to Ground
Input Voltage on USB_DP and USB_DN Pins Relative to Ground
Analog I/O absolute maximum ratings (exceptions: XTALI, XTALO,
RTC_XTALI, RTC_XTALO)
Storage Temperature
VDDIO can be applied to PSWITCH through a 10 kΩ resistor. This is necessary in order to enter the chip’s firmware recovery
mode. (The on-chip circuitry prevents the actual voltage on the pin from exceeding acceptable levels.)
Application should include a Schottky diode between BATT and VDD4P2.
USB_DN and USB_DP can tolerate 5V for up to 24 hours. Note that while 5V is applied to USB_DN or USB_DP, LRADC
readings can be corrupted.
shows the electrostatic discharge immunity.
Charge Device Model (CDM)
Human Body Model (HBM)
2
289-Pin BGA Package
i.MX28 Applications Processor Data Sheet for Consumer Products, Rev. 0
Parameter
Table 6. DC Absolute Maximum Ratings (continued)
Table 7. Electrostatic Discharge Immunity
3
DCDC_BATT
V
Symbol
DDIO.EMI
Tested Level
Min.
–0.3
–0.3
–0.3
–0.3
–0.3
–40
500 V
2 kV
VDDIO+0.3
VDDIO+0.3
Freescale Semiconductor
BATT
Max.
3.63
3.63
125
Units
°
V
V
V
V
V
C

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