BAR90081LSE6327XT Infineon Technologies, BAR90081LSE6327XT Datasheet - Page 4

• Manufacturer Part Number: BAR90081LSE6327XT
• Description: PIN Diodes Silicon Deep Trench PIN Diodes
• Manufacturer: Infineon Technologies
• Type: Switchr

Specifications of BAR90081LSE6327XT

• Configuration: Quad
• Forward Current: 100mA
• Forward Voltage: 1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Operating Temperature (max): 125C
• Applications Frequency Range: UHF
• Lead Free Status / RoHS Status: Compliant

Diode capacitance C
f = Parameter
Forward resistance r
f = 100 MHz
Ohm
10
0.35
0.25
0.15
pF
10
10
0.5
0.4
0.3
0.2
0.1
-1
1
0
10
0
-1
2
4
6
10
1 MHz
100 MHz
1 GHz
1.8 GHz
0
8
T
f
= ƒ (I
10
= ƒ (V
12
F
)
10
R
14
)
1
16
mA
V
I
V
F
R
20
10
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
0.2
4
3
2
1
0
0
2
0.4
4
1 GHz
100 MHz
6
1.8 GHz
F
0.6
= ƒ (V
8
10
F
BAR90-081LS
0.8
12
)
14
P
2009-01-26
-40°C
+25 °C
+85 °C
+125 °C
= ƒ (V
16
V
V
V
V
R
F
R
)
1.2
20