BUP403 Infineon Technologies, BUP403 Datasheet
Home Discrete Semiconductor Products IGBTs - Single BUP403
Manufacturer Part Number
BUP403
Manufacturer
Infineon Technologies
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Supplier Unconfirmed
Available stocks
IGBT
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 403
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current, (limited by bond wire)
T
T
Pulsed collector current, t
T
T
Avalanche energy, single pulse
I
L = 200 µH, T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
GE
= 25 A, V
= 60 °C
= 90 °C
= 25 °C
= 90 °C
= 25 °C
= 20 k
Preliminary data
CC
j
= 25 °C
= 50 V, R
GE
p
= 1 ms
= 25
V
600V
CE
I
42A
C
1
Package
TO-220 AB
Symbol
V
V
V
I
I
E
P
T
T
C
Cpuls
j
stg
CE
CGR
GE
AS
tot
Pin 1
G
Ordering Code
C67078-A4406-A2
- 55 ... + 150
- 55 ... + 150
Values
± 20
600
600
104
200
42
32
64
65
Pin 2
C
Jul-31-1996
BUP 403
Unit
V
A
mJ
W
°C
Pin 3
E
Related parts for BUP403
BUP403 Summary of contents
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 403 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC ...
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 CE, ...
Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 ...
Power dissipation tot C parameter: T 150 °C j 220 W 180 P tot 160 140 120 100 Safe operating area ...
Typ. output characteristics parameter µ ° 17V 50 15V I 13V C 45 11V ...
Typ. switching time inductive load , par 300 ± ...
Typ. gate charge Gate parameter puls 100 Short circuit safe operating ...
Package Outlines Dimensions in mm Weight: Semiconductor Group 8 BUP 403 Jul-31-1996 ...
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