BSM300GA120DN2S Infineon Technologies, BSM300GA120DN2S Datasheet - Page 5

• Manufacturer Part Number: BSM300GA120DN2S
• Description: IGBT Modules 1200V 300A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM300GA120DN2S

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 430 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 2500 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 300.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

BSM 300 GA 120 DN2S
Typ. output characteristics
I
Typ. transfer characteristics
I
C
parameter: t
C
parameter: t
I
I
C
C
= f (V
= f (V
600
500
450
400
350
300
250
200
150
100
600
500
450
400
350
300
250
200
150
100
50
50
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
600
500
450
400
350
300
250
200
150
100
50
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
Oct-27-1997
V
V
CE
5