BSM10GD120DN2E3224 Infineon Technologies, BSM10GD120DN2E3224 Datasheet
Home Discrete Semiconductor Products IGBTs - Single BSM10GD120DN2E3224
Manufacturer Part Number
BSM10GD120DN2E3224
Description
IGBT Modules N-CH 1.2KV 15A
Manufacturer
Infineon Technologies
Specifications of BSM10GD120DN2E3224
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.7 V
Continuous Collector Current At 25 C
15 A
Gate-emitter Leakage Current
120 nA
Power Dissipation
80 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2
Lead Free Status / RoHS Status
Supplier Unconfirmed
Available stocks
Part Number:
BSM10GD120DN2E3224
BSM 10 GD 120 DN2 E3224
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 10 GD 120 DN2
BSM 10 GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 15A
1200V 15A
CE
I
C
1
Package
ECONOPACK 2
ECONOPACK 2K
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
Ordering Code
C67076-A2513-A67
C67070-A2513-A67
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
15
10
30
20
80
16
11
1.52
2
2006-02-01
Unit
V
A
W
°C
K/W
Vac
mm
sec
Related parts for BSM10GD120DN2E3224
BSM10GD120DN2E3224 Summary of contents
BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter ...
BSM 10 GD 120 DN2 E3224 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0. CE, C Collector-emitter saturation voltage ...
BSM 10 GD 120 DN2 E3224 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 150 Gon Rise time V = 600 ...
BSM 10 GD 120 DN2 3224 Power dissipation = ( tot C parameter: T 150 ° tot Collector current = (T ...
BSM 10 GD 120 DN2 E3224 Typ. output characteristics parameter µ ° 17V 16 15V I 13V C 11V ...
BSM 10 GD 120 DN2 E3224 Typ. gate charge = ( Gate parameter puls 600 ...
BSM 10 GD 120 DN2 E3224 Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 10 GD 120 DN2 E3224 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 ...
BSM 10 GD 120 DN2 E3224 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 ...
Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...
Related keywords
BSM10GD120DN2E3224 datasheet BSM10GD120DN2E3224 data sheet BSM10GD120DN2E3224 pdf datasheet BSM10GD120DN2E3224 component BSM10GD120DN2E3224 part BSM10GD120DN2E3224 distributor BSM10GD120DN2E3224 RoHS BSM10GD120DN2E3224 datasheet download