BSM300GA170DN2 Infineon Technologies, BSM300GA170DN2 Datasheet

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BSM300GA170DN2

Manufacturer Part Number
BSM300GA170DN2
Description
IGBT Modules N-CH 1.7KV 440A
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM300GA170DN2

Configuration
Single Dual Emitter
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
440 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
300.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM300GA170DN2
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM300GA170DN2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM300GA170DN2
Quantity:
50
Part Number:
BSM300GA170DN2S
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM300GA170DN2S
Quantity:
50
BSM 300 GA 170 DN2
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
Type
BSM 300 GA 170 DN2
BSM 300 GA 170 DN2 S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
G on,min
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
= 5.6 Ohm
p
= 1 ms
V
1700V 440A
1700V 440A
CE
I
C
1
Package
SINGLE SWITCH 1
SSW SENSE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2706-A67
C67070-A2708-A67
+ 150
± 20
1700
1700
2500
4000
440
300
880
600
0.05
0.17
F
20
11
Oct-27-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM300GA170DN2 Summary of contents

Page 1

BSM 300 GA 170 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • 5.6 Ohm G on,min Type BSM 300 GA 170 DN2 BSM 300 GA 170 ...

Page 2

BSM 300 GA 170 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 300 ...

Page 3

BSM 300 GA 170 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 1200 5.6 Gon Rise time V = 1200 V, ...

Page 4

BSM 300 GA 170 DN2 Power dissipation = ( tot C parameter: T 150 °C j 2600 W 2200 P 2000 tot 1800 1600 1400 1200 1000 800 600 400 200 Collector ...

Page 5

BSM 300 GA 170 DN2 Typ. output characteristics parameter µ ° 600 A 17V 500 15V I 13V C 450 11V 9V 400 7V 350 ...

Page 6

BSM 300 GA 170 DN2 Typ. gate charge = ( Gate parameter 300 A C puls 800 0.0 0.5 1.0 1.5 ...

Page 7

BSM 300 GA 170 DN2 Typ. switching time inductive load , T = 125° par 1200 ± ...

Page 8

BSM 300 GA 170 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 600 A 500 I F 450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 ...

Page 9

BSM 300 GA 170 DN2 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-27-1997 ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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