F4-50R12MS4 Infineon Technologies, F4-50R12MS4 Datasheet - Page 3

• Manufacturer Part Number: F4-50R12MS4
• Description: IGBT Modules N-CH 1.2KV 70A
• Manufacturer: Infineon Technologies

Specifications of F4-50R12MS4

• Configuration: Quad
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 70 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo D
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoDUAL ™ 2
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
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