FS50R12KE3 Infineon Technologies, FS50R12KE3 Datasheet

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FS50R12KE3

Manufacturer Part Number
FS50R12KE3
Description
IGBT Modules 1200V 50A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet

Specifications of FS50R12KE3

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Continuous Collector Current At 25 C
75 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
270 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
ECONO 2
Ic (max)
50.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK™ 2
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

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IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
prepared by: MOD-D2; M. Münzer
approved: SM TM; Robert Severin
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Technische Information / technical information
T
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
V
f= 1MHz, T
f= 1MHz, T
V
V
date of publication: 2002-09-03
revision: 3.0
p
p
C
C
C
vj
c
c
c
= 1ms, T
= 1ms
R
GE
CE
CE
= 50A, V
= 50A, V
= 2,0mA, V
= 80°C
= 25°C
= 25°C; Transistor
= 25°C
= 0V, t
= -15V...+15V
= 1200V, V
= 0V, V
p
= 10ms, T
c
GE
GE
= 80°C
vj
vj
GE
FS50R12KE3
= 25°C, V
= 25°C, V
= 15V, T
= 15V, T
CE
1 (8)
= 20V, T
GE
= V
= 0V, T
GE
vj
, T
= 125°C
vj
vj
vj
CE
CE
= 25°C
= 125°C
= 25°C
vj
= 25V, V
= 25V, V
= 25°C
vj
= 25°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C, nom
I
I
C
I
I
C
P
CRM
FRM
GE(th)
Q
CEsat
CES
GES
I²t
I
GES
ISOL
CES
I
C
res
tot
F
ies
G
min.
5,0
-
-
-
-
-
-
-
DB_FS50R12KE3_ 3.0.xls
1200
0,47
3,50
0,13
typ.
100
270
100
700
+20
2,5
1,7
2,0
5,8
50
75
50
-
-
2002-09-03
max.
2,15
400
6,5
5
-
-
-
-
A²s
mA
µC
nA
kV
nF
nF
W
V
A
A
A
V
A
A
V
V
V

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FS50R12KE3 Summary of contents

Page 1

... V 1200 V CES nom 100 A CRM P 270 W tot V +20 V GES 100 A FRM I²t 700 A²s V 2,5 kV ISOL min. typ. max. - 1,7 2, CEsat - 2 5,0 5,8 6,5 V GE(th 0,47 µ 3,50 nF ies res CES 400 nA GES DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 2

... (8) min. typ. max 0,09 - µs d,on - 0,09 - µ 0,03 - µ 0,05 - µ 0,42 - µs d,off - 0,52 - µ 0,07 - µ 0,09 - µ 5 6 off I - 200 - σ 2,5 - mΩ CC´/EE´ - 1, µ µ 2,2 - rec mJ - 4,1 - DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 3

... Modul / per module λ = 1W/m*K / λ = 1W/m*K Paste grease Schraube / screw M5 3 (8) min. typ. max kΩ 25 ∆R 3375 - K 25/ 0,45 K/W R thJC - - 0,75 K 0,02 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 10,0 mm 7,5 mm 225 180 g DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 4

... FS50R12KE3 Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [V] CE VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V 1,0 1,5 2,0 2,5 3 15V GE 2,5 3,0 3 125°C vj 3,5 4,0 4,5 5,0 DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 5

... Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) 100 0,0 0,2 0,4 FS50R12KE3 Tvj=25°C Tvj=125° [V] GE Tvj = 25°C Tvj = 125°C 0,6 0,8 1,0 1,2 1 20V f 1,6 1,8 2,0 2,2 2,4 DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 6

... IGBT-Modules Schaltverluste (typisch) Switching losses (typical Schaltverluste (typisch) Switching losses (typical FS50R12KE3 off V =±15V, R =18Ω Eon Eoff Erec [ f =±15V, I =50A Eon Eoff Erec [Ω ( rec C =600V, T =125° 100 = f f(R ) off G rec G =600V, T =125° DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 7

... IC,Chip IC,Modul 200 FS50R12KE3 Z thJC 0,01 0 5,077E-02 7,893E-02 2,032E-01 2,345E-03 2,820E-01 2,820E-02 7,637E-02 4,933E-01 1,421E-01 3,333E-03 3,429E-02 1,294E-01 V =±15V 400 600 800 (t) Zth : IGBT Zth : Diode 1,142E-01 1,128E-01 4,501E-02 7,662E-01 =18Ω, T =125° 1000 1200 1400 DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 8

... Technische Information / technical information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram FS50R12KE3 8 (8) DB_FS50R12KE3_ 3.0.xls 2002-09-03 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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