BSM200GB60DLC Infineon Technologies, BSM200GB60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM200GB60DLC
• Description: IGBT Modules 600V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB60DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 445 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IS4 ( 34 mm )
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
18
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
50
2
Eon
Eoff
Erec
Eon
Eoff
Erec
100
4
BSM 200 GB 60 DLC
150
6
6 (8)
R
I
200
C
G
E
8
I
[A]
C
[ ]
= 200A , V
on
E
= f (R
R
G,on
on
= f (I
= 1,5
CC
250
G
10
= 300V , T
), E
C
= = = = R
), E
off
G,off
= f (R
= 1,5 , V
off
vj
= 125°C
= f (I
300
12
G
), E
CC
C
), E
= 300V, T
rec
rec
= f (R
350
= f (I
14
vj
= 125°C
G
C
)
)
BSM 200 GB 60 DLC
400
16
2000-02-08