BSM 200 GB 120 DN2 Infineon Technologies, BSM 200 GB 120 DN2 Datasheet
BSM 200 GB 120 DN2
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BSM 200 GB 120 DN2 Summary of contents
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... BSM 200 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ° °C C Pulsed collector current ° ...
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... BSM 200 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 200 200 Zero gate voltage collector current V = 1200 1200 Gate-emitter leakage current Characteristics Transconductance 200 Input capacitance MHz CE GE Output capacitance MHz CE GE Reverse transfer capacitance ...
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... BSM 200 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 4.7 Gon Rise time V = 600 4.7 Gon Turn-off delay time V = 600 - 4.7 Goff Fall time V = 600 - 4.7 Goff Free-Wheel Diode Diode forward voltage I = 200 °C ...
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... BSM 200 GB 120 DN2 Power dissipation tot C parameter: T 150 °C j 1500 W 1300 1200 P tot 1100 1000 900 800 700 600 500 400 300 200 100 Collector current parameter 300 A 260 I 240 C 220 200 180 160 140 120 100 Safe operating area ...
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... BSM 200 GB 120 DN2 Typ. output characteristics parameter µ ° 400 A 17V 15V I 13V C 300 11V 9V 7V 250 200 150 100 Typ. transfer characteristics parameter µ 400 300 250 200 150 100 Typ. output characteristics parameter: t 400 I C 300 250 200 ...
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... BSM 200 GB 120 DN2 Typ. gate charge Gate parameter 200 A C puls 600 200 400 600 800 Reverse biased safe operating area , 150°C Cpuls CE j parameter 2 Cpuls C 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 1200 Typ. capacitances ...
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... BSM 200 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± 100 200 Typ. switching losses inductive load , par 600 ± 100 mWs 100 200 Typ. switching time 4.7 par tdoff tdon 300 A 500 I C Typ. switching losses = 125° ...
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... BSM 200 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 400 300 250 T =125°C j 200 150 100 50 0 0.0 0.5 1.0 1.5 Transient thermal impedance parameter K/W Z thJC - =25° 2 Diode ) 0.50 single pulse - Oct-21-1997 0.20 ...
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... BSM 200 GB 120 DN2 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-21-1997 ...
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Technische Information / Technical Information IGBT-Module BSM200GB120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM200GB120DN2.xls 2001-09-20 ...
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Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produkte s für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen ...