FB20R06KL4_B1 Infineon Technologies, FB20R06KL4_B1 Datasheet - Page 8

• Manufacturer Part Number: FB20R06KL4_B1
• Description: IGBT Modules N-CH 600V 25A
• Manufacturer: Infineon Technologies

Specifications of FB20R06KL4_B1

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 25 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 20.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: EasyPIM™ 2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / technical information
10,000
1,000
0,100
45
40
35
30
25
20
15
10
5
0
0
0,001
Sicherer Arbeitsbereich Wechselr. (RBSOA)
reverse bias save operating area inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
transient thermal impedance inverter
IC,Modul
IC,Chip
100
Zth-IGBT
Zth-FWD
0,01
200
FB20R06KL4B1
IGBT: r
FWD: r
i
i
i
[K/W]: 118,66e-3 592,55e-3 464,26e-3
[K/W]: 245,4e-3
i
i
V
[s]:
[s]:
t [s]
CE
300
[V]
3e-6
3e-6
1
0,1
8(12)
400
1,22
Z
79,74e-3
80,4e-3
T
thJH
2
vj
= 125°C, V
= f (t)
I
C
= f (V
500
956,8e-3
10,28e-3
10,35e-3
GE
1
3
= ±15V, R
CE
)
Vorläufig
preliminary
624,52e-3
1,27
G
600
226,61e-3
227,3e-3
=
4
47 Ohm
10
700