IXFH50N60P3 IXYS, IXFH50N60P3 Datasheet - Page 3

• Manufacturer Part Number: IXFH50N60P3
• Description: MOSFET N-CH 600V 50A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH50N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 1040W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.145
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 94
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
3.0
2.6
2.2
1.8
1.4
1.0
0.6
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
0
V
GS
10
Fig. 5. R
= 10V
2
Fig. 1. Output Characteristics @ T
1
Fig. 3. Output Characteristics @ T
20
4
DS(on)
2
30
6
Normalized to I
Drain Current
40
3
I
V
D
V
8
DS
- Amperes
DS
- Volts
50
- Volts
T
4
J
10
= 125ºC
60
V
D
V
GS
GS
= 25A Value vs.
12
= 10V
5
= 10V
7V
70
7V
6V
4V
6V
5V
5V
J
J
T
= 25ºC
J
= 125ºC
14
= 25ºC
80
6
16
90
7
100
18
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
IXFT50N60P3 IXFQ50N60P3
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
Junction Temperature
10
T
Case Temperature
T
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
V
GS
V
DS
= 10V
8V
15
50
50
- Volts
7V
6V
5V
IXFH50N60P3
D
75
75
= 25A Value vs.
20
I
D
= 50A
100
100
J
25
I
= 25ºC
D
125
125
= 25A
150
150
30