IXFH50N60P3 IXYS, IXFH50N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH50N60P3
• Description: MOSFET N-CH 600V 50A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH50N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 1040W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.145
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 94
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
140
120
100
10
80
70
60
50
40
30
20
10
80
60
40
20
1
0
0
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.0
0.5
10
4.5
Fig. 7. Input Admittance
T
0.6
Fig. 11. Capacitance
J
= 125ºC
15
5.0
V
0.7
V
V
DS
GS
SD
20
- Volts
- Volts
- Volts
0.8
T
5.5
J
= 125ºC
- 40ºC
25
25ºC
T
0.9
J
C oss
= 25ºC
C rss
C iss
6.0
30
1.0
6.5
35
1.1
7.0
1.2
40
1000
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
0
10
0
V
I
I
T
T
Single Pulse
D
G
10
DS
J
C
R
= 25A
= 10mA
10
= 150ºC
= 25ºC
DS(on)
IXFT50N60P3 IXFQ50N60P3
= 300V
Fig. 12. Forward-Bias Safe Operating Area
20
Limit
20
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
30
Q
40
G
- NanoCoulombs
I
D
V
- Amperes
DS
50
40
100
- Volts
60
IXFH50N60P3
50
70
60
T
80
J
= - 40ºC
125ºC
25ºC
70
90
1ms
100µs
1,000
100
80