CY7C1315KV18-250BZXC Cypress Semiconductor Corp, CY7C1315KV18-250BZXC Datasheet - Page 25

• Manufacturer Part Number: CY7C1315KV18-250BZXC
• Description: CY7C1315KV18-250BZXC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1315KV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Capacitance
Tested initially and after any design or process change that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Note
Document Number: 001-58904 Rev. *C
C
C


28. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V
Parameter
Parameter
IN
O
JA
JC
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I
OUTPUT
Device
Under
Test
V
REF
ZQ
Input capacitance
Output capacitance
Thermal resistance 
(junction to ambient)
Thermal resistance 
(junction to case)
(a)
Z
RQ =
250 
0.75 V
0
= 50 
Description
Description
V
REF
R
L
= 0.75 V
= 50 
Figure 4. AC Test Loads and Waveforms
INCLUDING
T
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
Device
Under
Test
OUTPUT
A
JIG AND
SCOPE
= 25 C, f = 1 MHz, V
V
REF
ZQ
OL
/I
OH
and load capacitance shown in (a) of
0.75 V
RQ =
250 
(b)
Test Conditions
Test Conditions
V
REF
= 0.75 V
DD
R = 50 
5 pF
= 1.8 V, V
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
0.25 V
DDQ
= 1.5 V
Figure
1.25 V
4.
Slew Rate = 2 V/ns
All Input Pulses
0.75 V
165 FBGA
Package
Max
13.7
3.73
4
4
[28]
DDQ
Page 25 of 33
°C/W
°C/W
= 1.5 V, input
Unit
Unit
pF
pF
[+] Feedback