CY7C1315KV18-250BZXC Cypress Semiconductor Corp, CY7C1315KV18-250BZXC Datasheet - Page 31

• Manufacturer Part Number: CY7C1315KV18-250BZXC
• Description: CY7C1315KV18-250BZXC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1315KV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Acronyms
Document Number: 001-58904 Rev. *C
DDR
FBGA
HSTL
I/O
JTAG
LSB
LMBU
LSBU
MSB
PLL
QDR
SEL
SRAM
TAP
TCK
TMS
TDI
TDO
Acronym
double data rate
fine-pitch ball grid array
high-speed transceiver logic
input/output
joint test action group
least significant bit
logical multiple bit upset
logical single bit upset
most significant bit
phase locked loop
quad data rate
single event latch up
static random access memory
test access port
test clock
test mode select
test data-in
test data-out
Description
Document Conventions
Units of Measure
µs
ns

K
V
µA
mA
mm
ms
MHz
pF
W
°C
Symbol
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
micro seconds
nano seconds
ohms
kilo ohms
Volts
micro Amperes
milli Amperes
milli meter
milli seconds
Mega Hertz
pico Farad
Watts
degree Celcius
Unit of Measure
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