MT41J512M8THD-15E:D Micron Technology Inc, MT41J512M8THD-15E:D Datasheet - Page 10

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MT41J512M8THD-15E:D

Manufacturer Part Number
MT41J512M8THD-15E:D
Description
IC DDR3 SDRAM 4GBIT 78FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheet

Specifications of MT41J512M8THD-15E:D

Organization
512Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
4G (512M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / Rohs Status
Compliant

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Table 5:
Table 6:
Figure 5:
PDF: 09005aef83188bab/Source: 09005aef83169de6
MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
Parameter/Condition
Operating case temperature
Die Rev
A
D
Package
82-ball
78-ball
Thermal Characteristics
Thermal Impedance
Temperature Test Point Location
Notes: 1. MAX operating case temperature. T
Notes: 1. Thermal resistance data is based upon a number of samples from multiple lots and should
Substrate
2-layer
4-layer
2-layer
4-layer
Test point
2. A thermal solution must be designed to ensure the DRAM device does not exceed the max-
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
(see Figure 5).
imum T
operation.
interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh
(ASR), if available, must be enabled.
be viewed as a typical number.
C
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
θJA (°C/W)
Airflow =
C
during operation.
0m/s
46.0
34.2
61.0
44.5
θJA (°C/W)
Airflow =
Width (W)
1m/s
33.9
27.1
43.7
35.3
10
Symbol
T
C
0.5 (W)
C
θJA (°C/W)
Airflow =
is measured in the center of the package
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2m/s
28.1
23.6
37.3
31.5
4Gb: x4, x8 TwinDie DDR3 SDRAM
0 to 85
0 to 95
Value
0.5 (L)
θJB (°C/W)
Length (L)
25.6
23.2
27.1
23.2
Electrical Specifications
Units
©2008 Micron Technology, Inc. All rights reserved.
θJC (°C/W)
°C
°C
1.73
2.8
1, 2, 3, 4
Notes
1, 2, 3
Notes
C
1
1
during

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