MT4HTF6464AY-53EE1 Micron Technology Inc, MT4HTF6464AY-53EE1 Datasheet - Page 18

• Manufacturer Part Number: MT4HTF6464AY-53EE1
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF6464AY-53EE1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 1Gb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 720mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Serial Presence-Detect
Table 14: SPD EEPROM Operating Conditions
Table 15: SPD EEPROM AC Operating Conditions
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter/Condition
Supply voltage
Input high voltage: logic 1; All inputs
Input low voltage: logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 kHz
Power supply current, WRITE: SCL clock frequency = 100 kHz
Parameter/Condition
SCL LOW to SDA data-out valid
Time bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
SDA and SCL rise time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
OUT
Notes:
IN
= 3mA
OUT
= GND to V
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
= GND to V
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
and the falling or rising edge of SDA.
write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-
up resistance, and the EEPROM does not respond to its slave address.
DD
DD
18
t
Symbol
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STA
SU:STO
t
t
t
t
HIGH
LOW
WRC
t
t
t
BUF
Symbol
SCL
AA
DH
t
t
V
t
R
F
I
I
DDSPD
V
I
V
CCW
V
I
I
CCR
t
I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
LO
SB
OL
LI
WRC) is the time from a valid stop condition of a
IH
IL
Min
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
V
–
–
0
–
–
–
DDSPD
Min
–0.6
0.05
1.7
0.1
1.6
0.4
–
2
× 0.7
Serial Presence-Detect
Max
300
300
400
0.9
50
10
–
–
–
–
–
–
–
–
–
© 2003 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
3
3
4
1
3
Units
+ 0.5
× 0.3
kHz
ms
µs
µs
ns
ns
ns
µs
µs
µs
µs
µs
ns
µs
µs
Units
Notes
mA
mA
µA
µA
µA
V
V
V
V
1
2
2
3
4