MT4VDDT1664HY-335K1 Micron Technology Inc, MT4VDDT1664HY-335K1 Datasheet

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MT4VDDT1664HY-335K1

Manufacturer Part Number
MT4VDDT1664HY-335K1
Description
MODULE DDR SDRAM 128MB 200SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT4VDDT1664HY-335K1

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
16Mx64
Total Density
128MByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
880mA
Number Of Elements
4
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Memory Type
DDR SDRAM
Memory Size
128MB
Speed
333MT/s
Features
-
Package / Case
200-SODIMM
Lead Free Status / Rohs Status
Compliant
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64) or 256MB (32 Meg x 64)
• Vdd = Vddq = +2.5V (-40B: Vdd = Vddq = +2.6V)
• Vddspd = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
DDR SDRAM SODIMM
MT4VDDT1664H – 128MB
MT4VDDT3264H – 256MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef837131bb/Source: 09005aef8086ea0b
dd4c16_32x64h.fm - Rev. E 10/08 EN
Table 1:
(SODIMM)
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
Speed
Grade
-26A
-40B
-335
-265
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC3200
PC2700
PC2100
PC2100
Notes:
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
Data Rate (MT/s)
t
RCD and
128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM
CL = 2.5
333
333
266
266
www.micron.com
t
RP for -335 modules show 18ns to align with industry specifications;
1
CL = 2
266
266
266
200
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5ns (200 MHz), 400 MT/s, CL = 3
– 6ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
PCB height: 31.75mm (1.25in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
module offerings.
t
(ns)
RCD
15
18
20
20
200-Pin SODIMM (MO-224)
(ns)
t
A
A
15
18
20
20
RP
1
≤ +85°C)
≤ +70°C)
©2003 Micron Technology, Inc. All rights reserved.
(ns)
t
55
60
65
65
RC
2
2
Marking
Features
None
-40B
-26A
-335
-265
Notes
G
Y
I
1

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MT4VDDT1664HY-335K1 Summary of contents

Page 1

... 400 333 266 – 333 266 – 266 266 – 266 200 t t RCD and RP for -335 modules show 18ns to align with industry specifications; 1 200-Pin SODIMM (MO-224) 1 ≤ +70°C) A ≤ +85°C) A module offerings. 2. Not recommended for new designs RCD RP RC (ns) ...

Page 2

... Part Number Density MT4VDDT1664HG-40B__ 128MB 128MB MT4VDDT1664HY-40B__ MT4VDDT1664HG-335__ 128MB MT4VDDT1664HY-335__ 128MB MT4VDDT1664HG-26A__ 128MB 128MB MT4VDDT1664HG-265__ 128MB MT4VDDT1664HY-265__ Table 4: Part Numbers and Timing Parameters – 256MB Modules Base device: MT46V32M16, Module 2 Part Number Density MT4VDDT3264HG-40B__ 256MB 256MB MT4VDDT3264HY-40B__ 256MB MT4VDDT3264HG-335__ MT4VDDT3264HY-335__ 256MB ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 51 Vss 101 3 Vss 53 DQ19 103 5 DQ0 55 ...

Page 4

... SPD EEPROM power supply: +2.3V to +3.6V. Supply SSTL_2 reference voltage (Vdd/2). Supply Ground. – No connect: These pins are not connected on the module. 4 Pin Assignments and Descriptions 2 C bus. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 5

Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DQ24 DQ25 ...

Page 6

... Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 9

Idd Specifications Table 9: Idd Specifications and Conditions – 128MB (Die Revision K) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one ...

Page 10

Table 10: Idd Specifications and Conditions – 128MB (All Other Die Revisions) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one bank ...

Page 11

Table 11: Idd Specifications and Conditions – 256MB Values are for the MT46V32M16 DDR SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one bank active-precharge current ...

Page 12

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current: Vin = GND to ...

Page 13

... 1.0 (0.039) 0.46 (0.018) 0.61 (0.024) TYP TYP Pin 1 63.6 (2.504) TYP Back view No components this side of module 47.40 (1.87) TYP their respective owners. characterization sometimes occur. 13 Module Dimensions U5 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 TYP 4 ...

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