MT9HVF12872PKZ-80EH1 Micron Technology Inc, MT9HVF12872PKZ-80EH1 Datasheet

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MT9HVF12872PKZ-80EH1

Manufacturer Part Number
MT9HVF12872PKZ-80EH1
Description
MOD DDR2 SDRAM 1GB 244RDIMM VLP
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT9HVF12872PKZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
800MT/s
Features
-
Package / Case
244-MiniRDIMM
Lead Free Status / Rohs Status
Compliant
DDR2 SDRAM VLP Mini-RDIMM
MT9HVF6472PKZ – 512MB
MT9HVF12872PKZ – 1GB
Features
• 244-pin, very low profile, mini registered dual in-
• Fast data transfer rates: PC2-6400, PC2-5300,
• 512MB (64 Meg x 72) or 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83d09b45
hvf9c64_128x72pkz.pdf - Rev. B 9/10 EN
line memory module
PC2-4200, or PC2-3200
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= 1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
512MB, 1GB (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
t
CK
CL = 6
800
800
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 244-Pin VLP Mini-RDIMM
CL = 4
533
533
553
553
400
Module height: 18.2mm (0.72 in.)
Notes:
Options
• Parity
• Operating temperature
• Package
• Frequency/CL
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin DIMM (halogen-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency; registered mode
CL = 3
400
400
400
400
400
module offerings.
will add one clock cycle to CL.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
© 2009 Micron Technology, Inc. All rights reserved.
≤ +85°C)
≤ +70°C)
(ns)
12.5
t
15
15
15
15
RP
1
Marking
Features
None
-80E
-800
-667
P
Z
I
(ns)
t
55
55
55
55
55
RC

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MT9HVF12872PKZ-80EH1 Summary of contents

Page 1

... DDR2 SDRAM VLP Mini-RDIMM MT9HVF6472PKZ – 512MB MT9HVF12872PKZ – 1GB Features • 244-pin, very low profile, mini registered dual in- line memory module • Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB (64 Meg x 72) or 1GB (128 Meg x 72) • Supports ECC error detection and correction • ...

Page 2

... Table 2: Addressing Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM 2 Part Number MT9HVF6472PK(I)Z-80E__ MT9HVF6472PK(I)Z-800__ MT9HVF6472PK(I)Z-667__ Table 4: Part Numbers and Timing Parameters – 1GB ...

Page 3

Pin Assignments Table 5: Pin Assignments 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 35 V ...

Page 4

Table 5: Pin Assignments (Continued) 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ18 DQ19 Pin for ...

Page 5

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 6

... SPD EEPROM power supply: 1.7–3.6V. Reference voltage: V /2. DD Ground. No connect: These pins are not connected on the module. No function: These pins are connected within the module, but provide no functionality. Not used: These pins are not used in specific module configurations/operations. Reserved for future use. 6 Pin Descriptions and V ...

Page 7

Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NF/DQS9# DM/ NF/ CS# DQS DQS# RDQS RDQS# DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS1# DM1/DQS10 NF/DQS10# ...

Page 8

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 9

... Electrical Specifications Stresses greater than those listed may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade -1GA ...

Page 11

IDD Specifications Table 9: I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 12

Table 10: I Specifications and Conditions – 1GB (Die Revision E and G) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter/Condition Operating ...

Page 13

Table 11: I Specifications and Conditions – 1GB (Die Revision H) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter/Condition Operating one bank ...

Page 14

... I REF RESET 1.8V DD RESET tion of the DDR2 SDRAM RDIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. 14 Register and PLL Specifications Min V + 125 V REF(DC) DDQ 0 V REF(DC) ...

Page 15

Table 13: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...

Page 16

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 15: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 17

... BACK VIEW U10 U12 U11 3.6 (0.142) TYP 38.4 (1.512) TYP complete design dimensions. times occur. 17 Module Dimensions U6 U7 18.3 (0.72) 18.1(0.713) 10.0 (0.394) TYP PIN 122 U13 PIN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

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