MT16JSF25664HZ-1G1F1 Micron Technology Inc, MT16JSF25664HZ-1G1F1 Datasheet - Page 4

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MT16JSF25664HZ-1G1F1

Manufacturer Part Number
MT16JSF25664HZ-1G1F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16JSF25664HZ-1G1F1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
204SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
1Gb
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
1.36A
Number Of Elements
16
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
204
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Table 5:
PDF: 09005aef83364b70/Source: 09005aef83364bd3
JSF16C256x64HZ.fm - Rev. A 5/08 EN
RAS#, CAS#,
CK0, CK0#,
CK1, CK1#
DQS#[7:0]
DQS[7:0],
ODT[1:0]
DQ[63:0]
Symbol
CKE[1:0}
DM[7:0]
EVENT#
BA[2:0]
A[13:0]
RESET#
SA[1:0]
V
V
S#[1:0]
WE#
SDA
REF
V
DDSPD
SCL
DD
CA
Pin Descriptions
(open drain)
(LVCMOS)
Output
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
Description
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 is sampled during a PRECHARGE
command to determine whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BA[2:0]) or all banks (A10 HIGH). If only one bank is to be precharged, the
bank is selected by BA. A12 is also used for BC4/BL8 identification as “BL on-the-fly”
during CAS commands. The address inputs also provide the op-code during the mode
register command set
Bank address inputs: BA[2:0] define the device bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register
(MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All control, command, and address input
signals are sampled on the crossing of the positive edge of CK and the negative edge of
CK#.
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM.
Input data mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH, along with the input data, during a write access. DM is sampled on
both edges of the DQS. Although the DM pins are input-only, the DM loading is designed
to match that of the DQ and DQS pins.
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, and DM. The ODT input will be
ignored if disabled via the LOAD MODE command.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Reset: RESET# is an active LOW CMOS input referenced to V
a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V
× V
likely be unterminated, heavily loaded, and have very slow slew rates. A slow slew rate
receiver design is recommended along with implementing on-chip noise filtering to
prevent false triggering (RESET# assertion minimum pulse width is 100ns).
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
Serial address inputs: These pins are used to configure the temperature sensor/SPD
EEPROM address range on the I
Serial clock for temperature sensor/SPD EEPROM: SCL is used to synchronize the
communication to and from the temperature sensor/SPD EEPROM.
Data input/output: Bidirectional data bus.
Data strobe: DQS and DQS# are differential data strobes. Output with read data. Edge-
aligned with read data. Input with write data. Center-aligned with write data.
Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of
the temperature sensor/SPD EEPROM on the module on the I
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.
Power supply: 1.5V ±0.075V. The component V
V
Temperature sensor/SPD EEPROM power supply: +3.0V to +3.6V.
Reference voltage: Control, command, and address (V
DD
DD
.
Q. RESET# assertion and deassertion are asynchronous. System applications will most
2GB (x64, DR) 204-Pin Halogen-Free DDR3 SDRAM SODIMM
.
A[13:0] address the 1Gb DDR3 devices.
4
2
C bus.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
DD
and V
DD
DD
/2).
Q are connected to the module
SS
2
.The RESET# input receiver is
C bus.
©2008 Micron Technology, Inc. All rights reserved
DD
Q and DC LOW ≤ 0.2

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