MT47H128M8HQ-3:E T/R Micron Technology Inc, MT47H128M8HQ-3:E T/R Datasheet - Page 22

• Manufacturer Part Number: MT47H128M8HQ-3:E T/R
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H128M8HQ-3:E T/R

• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#,
CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V, Vref = Vss, f = 100
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, Vout(DC) = VddQ/2, Vout (peak-to-peak) = 0.1V. DM input is grouped
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
Symbol Min Max Units Notes
Cdck
Cdio
Cck
Cdi
Cio
Ci
© 2004 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
0.25
0.25
2.0
2.0
4.0
0.5
Packaging
pF
pF
pF
pF
pF
pF
2, 3
1, 4
2, 3
1, 5
2, 3
1