IPI12CN10NG Infineon Technologies, IPI12CN10NG Datasheet - Page 2

• Manufacturer Part Number: IPI12CN10NG
• Description: SP000208928_N-KANAL POWER MOS_TU_RO
• Manufacturer: Infineon Technologies

Rev. 1.02
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252)
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO252)
V
(TO263)
V
(TO220, TO262)
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
GS
GS
=25 °C
=125 °C
=67 A
DS
page 2
=0 V, I
=V
=80 V, V
=80 V, V
=20 V, V
=10 V, I
=10 V, I
=10 V, I
|>2|I
GS
D
, I
|R
D
2
D
=1 mA
D
D
D
=83 µA
(one layer, 70 µm thick) copper area for drain
DS(on)max
GS
GS
DS
=67 A,
=67 A,
=67 A,
=0 V,
=0 V,
=0 V
4)
4)
IPB12CN10N G
,
IPI12CN10N G
min.
100
39
2
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
0.1
9.3
9.5
9.8
1.5
10
77
3
1
-
-
-
-
-
-
IPD12CN10N G
IPP12CN10N G
max.
12.4
12.6
12.9
100
100
1.2
62
40
75
50
4
1
-
-
-
2006-06-02
Unit
K/W
V
µA
nA
m
S