MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 43

• Manufacturer Part Number: MT29F1G08ABADAH4:D
• Description: MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAH4:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 11: Feature Addresses 01h: Timing Mode
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Subfeature
Parameter
P1
Timing mode
P2
P3
P4
Options
Mode 0
(default)
Mode 1
Mode 2
Mode 3
Mode 4
Mode 5
Notes:
1. The timing mode feature address is used to change the default timing mode. The timing
2. Supported for both 1.8V and 3.3V.
3. Supported for 3.3V only.
4. Not supported.
mode should be selected to indicate the maximum speed at which the device will re-
ceive commands, addresses, and data cycles. The five supported settings for the timing
mode are shown. The default timing mode is mode 0. The device returns to mode 0
when the device is power cycled. Supported timing modes are reported in the parame-
ter page.
I/O7
I/O6
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
I/O5
43
I/O4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
I/O3
I/O2
0
0
0
0
1
1
I/O1
0
0
1
1
0
0
Feature Operations
© 2010 Micron Technology, Inc. All rights reserved.
I/O0
0
1
0
1
0
1
Value
00h
01h
01h
01h
01h
01h
00h
00h
00h
Notes
1, 2
2
2
3
3
4