MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 80

• Manufacturer Part Number: MT29F1G08ABADAWP:D
• Description: MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – DC Characteristics and Operating Conditions
Table 25: DC Characteristics and Operating Conditions (3.3V)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Parameter
Sequential READ current
PROGRAM current
ERASE current
Standby current (TTL)
Standby current (CMOS)
Staggered power-up cur-
rent
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all in-
puts
Output high voltage
Output low voltage
Output low current
Notes:
t
RC =
CE#, CLE, ALE, WE#, RE#,
Line capacitance = 0.1µF
1. Measurement is taken with 1ms averaging intervals and begins after V
2. I
3. V
I/O[7:0], I/O[15:0],
CE# = V
V
Rise time = 1ms
V
t
WP# = 0V/V
WP# = 0V/V
OUT
RC (MIN); CE# = V
I
Conditions
IN
OL
OH
I
I
Electrical Specifications – DC Characteristics and Operating
OL
V
OH
OUT
CE# = V
= 0V to V
OL
(RB#) may need to be relaxed if R/B pull-down strength is not set to full.
= 0V to V
= –400µA
= 2.1mA
WP#
and V
= 0.4V
= 0mA
–
–
CC
–
- 0.2V;
IH
OL
;
CC
CC
CC
CC
may need to be relaxed if I/O drive strength is not set to full.
IL
;
I
Symbol
OL
V
I
I
I
V
I
I
V
I
V
(R/B#)
CC1
CC2
CC3
I
SB1
SB2
I
LO
ST
OH
LI
OL
80
IH
IL
0.67 x V
0.8 x V
Min
–0.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
8
1Gb x8, x16: NAND Flash Memory
CC
CC
Typ
25
25
25
10
10
–
–
–
–
–
–
–
–
10 per die
V
0.2 x V
CC
Max
±10
±10
0.4
35
35
35
50
1
+ 0.3
–
–
© 2010 Micron Technology, Inc. All rights reserved.
CC
CC
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
reaches V
Conditions
Notes
CC
1
3
3
2
(MIN).