74HC08N,652 Philips Semiconductors, 74HC08N,652 Datasheet - Page 3

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74HC08N,652

Manufacturer Part Number
74HC08N,652
Description
AND-GATE; DIP-14; AND LOGIC; 5 V (TYP.); -40; +125; 400 NS (MAX.) @ 6 V TR
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC08N,652

Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Supply
40 μA
Function Type
2-Inputs
Input Fall Time
400 ns (Max.) @ 6 V
Input Rise Time
400 ns (Max.) @ 6 V
Logic Function
AND Gate
Logic Type
CMOS
Number Of Circuits
Quad
Package Type
DIP-14
Special Features
Tri-State
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Voltage, Dc Input
6 V (Max.)
Voltage, Dc Output
6 V (Max.)
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. For DIP14 packages: above 70 C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 C derate linearly with 8 mW/K.
handbook, halfpage
V
V
V
T
t
V
I
I
I
I
T
P
SYMBOL
SYMBOL
r
IK
OK
O
CC
, t
amb
stg
CC
I
O
CC
tot
Quad 2-input AND gate
f
, I
For SSOP14 and TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
GND
A
B
Fig.5 HC logic diagram (one gate).
supply voltage
input voltage
output voltage
ambient
temperature
input rise and fall
times
supply voltage
input diode current
output diode current
output source or sink current
V
storage temperature
power dissipation
CC
PARAMETER
DIP14 package
other packages
or GND current
PARAMETER
see DC and AC
characteristics per device
V
V
V
CC
CC
CC
= 2.0 V
= 4.5 V
= 6.0 V
CONDITIONS
MNB037
Y
V
V
T
T
0.5 V < V
amb
amb
I
O
< 0.5 V or V
< 0.5 V or V
= 40 to +125 C; note 1
= 40 to +125 C; note 2
5
O
CONDITIONS
2.0
0
0
< V
MIN.
40
handbook, halfpage
I
CC
O
> V
> V
+ 0.5 V
74HC08
5.0
+25
6.0
CC
TYP.
CC
A
B
Fig.6 HCT logic diagram (one gate).
+ 0.5 V
+ 0.5 V
6.0
V
V
+125
1000
500
400
MAX.
CC
CC
4.5
0
0
MIN.
40
0.5
65
74HC08; 74HCT08
MIN.
74HCT08
5.0
+25
6.0
TYP.
+7.0
+150
750
500
Product specification
20
20
25
50
MAX.
MNA221
5.5
V
V
+125
500
MAX.
CC
CC
Y
V
mA
mA
mA
mA
mW
mW
C
UNIT
V
V
V
ns
ns
ns
UNIT
C

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