74HC08D,652 Philips Semiconductors, 74HC08D,652 Datasheet - Page 4

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74HC08D,652

Manufacturer Part Number
74HC08D,652
Description
AND-GATE; SO-14; 5.0 V (TYP.); -40; +125; 1000 NS (MAX.) TR; 1000 NS (MAX.) TF
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC08D,652

Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Input, Diode
± 20 mA
Current, Leakage, Input
0.1 uA (Typ.)
Current, Output, Diode
± 20 mA
Current, Quiescent Supply
2 uA (Max.)
Current, Supply
40 μA
Function Type
2-Inputs
Input Fall Time
1000 ns (Max.)
Input Rise Time
1000 ns (Max.)
Logic Function
AND Gate
Logic Type
CMOS
Number Of Circuits
Quad
Package Type
SO-14
Power Dissipation
500 mW (Max.)
Propagation Delay
25 ns
Special Features
Tri-State
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Philips Semiconductors
DC CHARACTERISTICS
Family 74HC08
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
T
V
V
V
V
I
I
I
LI
OZ
CC
SYMBOL
amb
IH
IL
OH
OL
Quad 2-input AND gate
= 25 C
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input leakage current
3-state output OFF current V
quiescent supply current
PARAMETER
V
V
V
V
V
I
I
I
I
O
I
I
I
I
I
I
I
I
I
I
I
= V
= V
= V
= V
= V
O
O
O
O
O
O
O
O
O
O
= V
= 20 A
= 20 A
= 4.0 mA
= 20 A
= 5.2 mA
= 20 A
= 20 A
= 4.0 mA
= 20 A
= 5.2 mA
IH
IH
CC
IH
CC
CC
TEST CONDITIONS
OTHER
or V
or V
or V
or GND
or GND; I
or GND
IL
IL
IL
;
6
O
= 0 6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
4.5
6.0
6.0
2.0
4.5
4.5
6.0
6.0
6.0
6.0
V
CC
(V)
1.5
3.15
4.2
1.9
4.4
3.98
5.9
5.48
MIN.
74HC08; 74HCT08
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
4.32
6.0
5.81
0
0
0.15
0
0.16
0.1
TYP.
Product specification
0.5
1.35
1.8
0.1
0.1
0.26
0.1
0.26
2
.0.1
.0.5
MAX.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
UNIT
A
A
A

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