1N4150W-V-GS18 Vishay / Small Signal & Opto Products (SSP), 1N4150W-V-GS18 Datasheet

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1N4150W-V-GS18

Manufacturer Part Number
1N4150W-V-GS18
Description
Diode, Small Signal; 200 mA; 1 V (Max.); 410 mW; 50 V sod123, SM
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet

Specifications of 1N4150W-V-GS18

Current, Forward
200 mA
Package Type
SOD-123
Power Dissipation
410 mW
Primary Type
Rectifier
Speed, Switching
Fast
Temperature, Junction, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
450 °C⁄W
Time, Reverse Recovery
4.0 nS (Max.)
Voltage, Forward
1 V
Voltage, Repetitive Peak Reverse
50 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Small Signal Switching Diode
Features
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
1)
Thermal Characteristics
T
Document Number 85720
Rev. 1.2, 06-Apr-05
• Silicon Epitaxial Planar Diode
• For general purpose and switching
• This diode is also available in other case
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
1N4150W-V
Peak reverse voltage
Maximum average forward
rectified current
Maximum power dissipation
Maximum junction temperature
Storage temperature range
amb
amb
Valid provided that electrodes are kept at ambient temperature.
styles including the DO-35 case with the type des-
ignation 1N4150, and the MiniMELF case with the
type designation LL4150.
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
1N4150W-V-GS18 or 1N4150W-V-GS08
T
amb
= 25 °C
Test condition
Test condition
Ordering code
e3
Symbol
Symbol
I
V
F(AV)
P
T
T
RM
tot
S
j
A4
Marking
- 65 to + 150
Vishay Semiconductors
Value
Value
410
200
150
50
1)
1N4150W-V
Tape and reel
Remarks
www.vishay.com
Unit
mW
Unit
mA
°C
°C
V
1

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1N4150W-V-GS18 Summary of contents

Page 1

... Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4150W-V 1N4150W-V-GS18 or 1N4150W-V-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Peak reverse voltage Maximum average forward ...

Page 2

... Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage drop I = 200 mA F Reverse current Reverse recovery time 0.1I rr Package Dimensions in mm (Inches) 0.1 (0.004) max. 0.55 (0.022) Cathode Band 1.70 (0.067) 1.40 (0.055) www.vishay.com 2 Test condition Symbol ...

Page 3

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85720 Rev. 1.2, 06-Apr-05 and may do so without further notice. 1N4150W-V Vishay Semiconductors www.vishay.com 3 ...

Page 4

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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