1N4150-NL Fairchild Semiconductor, 1N4150-NL Datasheet
1N4150-NL
Manufacturer Part Number
1N4150-NL
Description
High Conductance Ultra Fast Diode
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N4150-NL.pdf
(3 pages)
ã 1997 Fairchild Semiconductor Corporation
P
R
W
I
I
i
i
T
T
Symbol
Symbol
f
f(surge)
O
F
D
stg
J
Absolute Maximum Ratings*
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JA
IV
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Derate above 25 C
DO-35
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Characteristic
1N4150 / FDLL4150
Parameter
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
TA = 25°C unless otherwise noted
LL-34
TA = 25°C unless otherwise noted
1N / FDLL 4150
FDLL4150
DEVICE
Discrete POWER & Signal
Max
3.33
500
300
COLOR BAND MARKING
-65 to +200
Value
200
400
600
175
1.0
4.0
50
1ST BAND 2ND BAND
BLACK
Technologies
ORANGE
Units
Units
mW/ C
mA
mA
mA
mW
C/W
V
A
A
C
C
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1N4150-NL Summary of contents
Page 1
... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA ã 1997 Fairchild Semiconductor Corporation 1N4150 / FDLL4150 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & ...
Page 2
Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR T Forward Recovery Time FR High Conductance Ultra Fast Diode TA = 25°C unless otherwise ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...