1N4150-NL

Manufacturer Part Number1N4150-NL
DescriptionHigh Conductance Ultra Fast Diode
ManufacturerFairchild Semiconductor
1N4150-NL datasheet
 


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DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
W
Working Inverse Voltage
IV
I
Average Rectified Current
O
I
DC Forward Current
F
Recurrent Peak Forward Current
i
f
Peak Forward Surge Current
i
f(surge)
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
T
stg
T
Operating Junction Temperature
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Characteristic
P
Total Device Dissipation
D
Derate above 25 C
Thermal Resistance, Junction to Ambient
R
JA
ã 1997 Fairchild Semiconductor Corporation
1N4150 / FDLL4150
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
TA = 25°C unless otherwise noted
Parameter
TA = 25°C unless otherwise noted
Discrete POWER & Signal
Technologies
COLOR BAND MARKING
DEVICE
1ST BAND 2ND BAND
FDLL4150
BLACK
ORANGE
Value
Units
50
V
200
mA
400
mA
600
mA
1.0
A
4.0
A
-65 to +200
C
175
C
Max
Units
1N / FDLL 4150
500
mW
3.33
mW/ C
300
C/W

1N4150-NL Summary of contents

  • Page 1

    ... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA ã 1997 Fairchild Semiconductor Corporation 1N4150 / FDLL4150 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & ...

  • Page 2

    Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR T Forward Recovery Time FR High Conductance Ultra Fast Diode TA = 25°C unless otherwise ...

  • Page 3

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...