1N4150-NL Fairchild Semiconductor, 1N4150-NL Datasheet
1N4150-NL
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1N4150-NL Summary of contents
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... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA ã 1997 Fairchild Semiconductor Corporation 1N4150 / FDLL4150 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & ...
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Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR T Forward Recovery Time FR High Conductance Ultra Fast Diode TA = 25°C unless otherwise ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...