BTM7755G Infineon Technologies, BTM7755G Datasheet
BTM7755G
Specifications of BTM7755G
Related parts for BTM7755G
BTM7755G Summary of contents
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... Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.3 Status Flag Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.4 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.4.5 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7.1 Application and Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Data Sheet High Current H-Bridge 2 BTM7755G Rev. 2.0, 2010-05-28 ...
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... AEC Qualified Description The BTM7755G is a fully integrated high current H-bridge for motor drive applications. It contains two p-channel highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one package. Due to the p-channel highside switches the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit ...
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... D(LS) 4 High Current H-Bridge HS2 Overcurr. Detection HS2 Gate Driver HS LS off HS off Gate Driver LS Overcurr. Detection LS2 V V DS(HS) DS(HS OUT D L OUT1 V V OUT SD(LS OUT D L OUT2 V OUT V SD(LS) Rev. 2.0, 2010-05-28 BTM7755G Block Diagram VS OUT2 LS2 GND ...
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... OUT2 15 OUT2 16 OUT2 17 OUT2 18 Figure 3 Pin Configuration BTM7755G 4.2 Pin Definitions and Functions Pins written in bold type need power wiring. Pin Symbol Function 1..4, 33..36 OUT1 Output of first half bridge 5..8, 23..26 GND Ground 9 IN1 Input of first half bridge 10 IN2 Input of second half bridge 11 ...
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... Symbol Limit Values Min. Max -0.3 5.5 IN1, IN2, V INH D(HS) I D(LS -40 150 j T -55 150 stg V ESD - BTM7755G Unit Conditions V – V – A < 85° switch active V – mA – < 10µs peak °C – °C – HBM Rev. 2.0, 2010-05-28 ...
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... Figure 4 BTM7755G Maximum Single Pulse Current ( This diagram shows the maximum single pulse current that can be driven for a given pulse time maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. ...
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... Transient thermal impedance Figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7755G mounted according to JEDEC JESD51-7 at natural convection on FR4 2s2p board. The device (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu 35µm Cu). For the ...
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... Typ. Max. I – 5 9.5 S(on) I – S(off) – – - 120 T [°C] 9 High Current H-Bridge BTM7755G Block Description and Characteristics Unit Test Conditions INH IN1 IN2 DC-mode normal operation (no fault condition) µ INH IN1 IN2 < 85 ° µ INH IN1 IN2 160 ...
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... Power Stages The power stages of the BTM7755G consist of p-channel vertical DMOS transistors for the high side switches and n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize power dissipation in the forward operation of the integrated diodes ...
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... ON(LS) – 90 – 150 -I L(LKLS) – – – – V SD(LS) 2) – 0.9 – 0.8 – 0.6 11 High Current H-Bridge BTM7755G Block Description and Characteristics Unit Test Conditions Max. mΩ OUT = 13 °C; 1) – 150 °C 115 T j µ INH ...
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... LS df(LS) f(LS) dr(LS) Data Sheet t r(HS ) ΔV OUT to GND) load t f (LS ) ΔV OUT to VS) load + 0 f(HS r(LS) 12 High Current H-Bridge BTM7755G Block Description and Characteristics ( (HS ) 90% ΔV OUT 40 dr(LS ) r(LS ) 60% ΔV OUT 10% t Rev. 2.0, 2010-05-28 ...
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... OUT t f(LS df(LS This behavior of the BTM7755G will lead to freewheeling in OV(ON) 13 High Current H-Bridge BTM7755G Block Description and Characteristics Unit Test Conditions Max. 25 µs – – V/µs – 140 µs – 25 µs – – V/µs – ...
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... Overtemperature Protection The BTM7755G is protected against overtemperature by integrated temperature sensors. Each half bridge, which consists of one high side and one low side switch, is protected by one temperature sensor located in the high side switch. Both temperature sensors function independently. A detection of overtemperature through temperature sensor leads to a shut down of both switches in the half bridge ...
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... In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. This method of limiting the current has the advantage that the power dissipation in the BTM7755G is much smaller than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e ...
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... UV(OFF) – 0.2 V UV(HY) 155 175 T jSD 153 – T jSO Δ T – – t reset CLH0 CLL0 50 100 t CLS 16 High Current H-Bridge BTM7755G Block Description and Characteristics Unit Test Conditions Max. – V decreasing increasing – V 5.5 V increasing V S 5.4 V decreasing – °C ≤ ...
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... Chapter 7 both power switches. To drive the logic inputs no external driver is needed, therefore the BTM7755G can be interfaced directly to a microcontroller. 6.4.2 ...
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... OFF OFF OFF OFF 0 Status Flag ST Logic LOW (error Logic HIGH (normal operation) 18 High Current H-Bridge BTM7755G Block Description and Characteristics Mode Stand-by mode, reset 1 – – 1 – – Enable Open-load detection Enable Open-load detection 1 Shut-down of LSS, HSS activated, error detected ...
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... INHHY INHY – INH( IN1(H) IN2(H) – INH( IN1(L) IN2(L) V – – ST(LOW) I – – ST(LK) 19 High Current H-Bridge BTM7755G Block Description and Characteristics Unit Test Conditions Max – – V – 1) – mV 200 µ 5 IN1 IN2 INH 125 µ IN1 IN2 ...
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... The BTM7755G has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between power ground and logic ground pins of the device is minimized also necessary to ensure that all VS pins are at the same voltage level ...
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... OUT of the high ohmic half bridge. This has to be considered while choosing the right value of the pull-down resistor. Data Sheet Outputs IN2 HS1 LS1 HS2 LS2 ST 1 OFF OFF ON OFF OFF OFF OFF OFF ON OFF 21 High Current H-Bridge BTM7755G Application Information Mode HS2 active HS1 active both HSx are active 1 Rev. 2.0, 2010-05-28 ...
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... C 36x SEATING PLANE 2) 0.17 C A-B D 36x M 19 Ejector Mark Depth 0.2 MAX -0.2 1.67 9.73 22 High Current H-Bridge BTM7755G Package Outlines 0.35 x 45˚ 1) 7.6 -0.2 0.7 ±0.2 10.3 ±0.3 D PG-DSO-36-20, -29, -34, -43, -44-PO V05 HLGF1145 Dimensions in mm Rev. 2.0, 2010-05-28 ...
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... Revision History Revision Date Changes 2.0 2010-05-28 Initial version Data Sheet Data Sheet High Current H-Bridge 23 BTM7755G Revision History Rev. 2.0, 2010-05-28 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...