MT8HTF12864HTY-667E1 Micron Technology Inc, MT8HTF12864HTY-667E1 Datasheet - Page 17

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MT8HTF12864HTY-667E1

Manufacturer Part Number
MT8HTF12864HTY-667E1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8HTF12864HTY-667E1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
1Gb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
900mA
Number Of Elements
8
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Pin Count
200
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Table 13: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 1GB (Die Revision E and G) (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
17
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/-
1788
800
1428
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
1348
-53E
Specifications
-40E
1228
Units
mA

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