BTS5045-2EKA Infineon Technologies, BTS5045-2EKA Datasheet - Page 23

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BTS5045-2EKA

Manufacturer Part Number
BTS5045-2EKA
Description
SP000857484_ATV POWER IC_TR_RO
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS5045-2EKA

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
85 mOhm
Current - Output / Channel
3A
Current - Peak Output
32A
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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6.4
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in
typical application.
R
to limit the current in the sense transistor which behaves as a diode. The recommended value for
R
In case the overvoltage is not considered in the application,
resistor in parallel. Optionally a capacitor in parallel is recommended for EMC reasons.
During reverse polarity, no protection functions are available.
Figure 17
6.5
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTS5045-2EKA offers
several protection mechanisms.
6.5.1
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch
the current flowing in the DMOS. The current limitation value is
the current limitation as a function of the drain to source voltage.
Data Sheet
PROFET™+ 12V
DEN
IN
=
protection diodes
, and
Micro controller
R
SENSE
R
IN
Reverse Polarity Protection
Reverse Polarity Protection with External Components
Overload Protection
Current Limitation
= 4.7 kΩ.
IN0
are used to limit the current in the logic of the device and in the ESD protection stage.
R
GND
Z
R
R
R
GND
SENSE
R
resistor is used to limit the current in the Zener protection of the device. Resistors
DSEL
DEN
IN
can be either a 150 Ω resistor or Schottky diode with 1 kΩ resistor in parallel.
R
IS
ZD
DSEL
DEN
INx
IS
ESD
I
L(SC)
. During this time, the DMOS temperature is increasing, which affects
Z
IS(AZ)
Chapter 4.1
23
LOGIC
R
GND
V
GND
Z
GND
DS
can be replaced by a Schottky diode and 1kΩ
dependent.
with an external resistor.
Z
V
D(AZ)
S
Z
Figure 18
DS(AZ)
OUTx
Reverse Polarity .vsd
Protection Functions
shows the behavior of
Rev. 2.0, 2010-08-02
BTS5045-2EKA
Figure 17
V
DS(REV)
R
R
DEN
SENSE
-V
=
shows a
S(REV)
R
is used
R
DSEL
DSEL
=
,

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