IPG20N04S4L-08 Infineon Technologies, IPG20N04S4L-08 Datasheet - Page 8

MOSFET Power N-Channel 40V MOSFET

IPG20N04S4L-08

Manufacturer Part Number
IPG20N04S4L-08
Description
MOSFET Power N-Channel 40V MOSFET
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPG20N04S4L-08

Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8.2 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
20 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
 Details
Other names
IPG20N04S4L08XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N04S4L-08
Manufacturer:
ST
Quantity:
34 920
Part Number:
IPG20N04S4L-08A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
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or characteristics. With respect to any examples or hints given herein, any typical values stated
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Information
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Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
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the nearest Infineon Technologies Office (www.infineon.com).
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Infineon Technologies AG 2010
page 8
IPG20N04S4L-08
2010-10-05

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