BSO200P03S H Infineon Technologies, BSO200P03S H Datasheet - Page 6

• Manufacturer Part Number: BSO200P03S H
• Description: MOSFET Power P-KANAL
• Manufacturer: Infineon Technologies

Specifications of BSO200P03S H

• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 20.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / Rohs Status: Details
• Other names: BSO200P03SHXT

Rev. 1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
28
24
20
16
12
10
10
10
8
4
0
-60
DS
=f(T
4
3
2
10000
1000
); V
100
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=-9.1 A; V
5
typ.
20
10
GS
T
Crss
-V
98 %
Ciss
j
=-10 V
60
[°C]
DS
15
Coss
[V]
100
20
140
25
page 6
180
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
2
1
0
1
=f(T
-60
SD
0
)
j
); V
j
-20
GS
=V
DS
150 °C, 98%
20
0.5
; I
D
150 °C, typ
=-100 µA
min.
-V
T
max.
typ.
j
SD
60
[°C]
[V]
25 °C, typ
BSO200P03S H
100
1
140
25 °C, 98%
2010-02-15
180
1.5