MPR121QR2 Freescale Semiconductor, MPR121QR2 Datasheet - Page 8

• Manufacturer Part Number: MPR121QR2
• Description: IC CTLR TOUCH SENSOR 20-QFN
• Manufacturer: Freescale Semiconductor
• Type: Capacitive, Proximity Sensorr

Specifications of MPR121QR2

• Number Of Inputs/keys: 12 Key
• Data Interface: I²C, Serial
• Voltage - Supply: 1.71 V ~ 3.6 V
• Current - Supply: 29µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-UQFN, 20-µQFN
• Output Type: Logic
• Interface: I²C
• Input Type: Logic
• Supply Voltage: 2.5 V to 3.6 V
• Dimensions: 3 mm L x 3 mm W x 0.65 mm H
• Temperature Range: - 40 C to + 85 C
• Termination Style: SMD/SMT
• Supply Current: 29µA
• Ic Interface Type: I2C
• Supply Voltage Range: 1.71V To 3.6V
• Sensor Case Style: QFN
• No. Of Pins: 20
• Operating Temperature Range: -40°C To +85°C
• Interface Type: I2C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPR121QR2; MPR121QR2TR

Table 3. ESD and Latch-up Test Conditions
MPR121
8
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
ESD AND LATCH-UP PROTECTION CHARACTERISTICS
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 2. Absolute Maximum Ratings - Voltage (with respect to V
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up current at T
Supply Voltage
Supply Voltage
Input Voltage
Operating Temperature Range
GPIO Source Current per Pin
GPIO Sink Current per Pin
Storage Temperature Range
SCL, SDA, IRQ
Table 2
A
Rating
= 85°C
Rating
may affect device reliability or cause permanent damage to the device. For functional operating
Symbol
V
i
i
V
GPIO
GPIO
V
T
T
REG
DD
IN
O
S
Symbol
I
V
V
V
LATCH
ESD
ESD
ESD
SS
)
V
SS
- 0.3 to V
-0.3 to +2.75
-0.3 to +3.6
-40 to +125
-40 to +85
Value
1.2
12
±2000
Value
±200
±500
±100
DD
+ 0.3
Freescale Semiconductor
Unit
mA
Unit
V
V
V
mA
mA
°C
°C
V
V
V
Sensors