MT18HTF25672PZ-80EH1 Micron Technology Inc, MT18HTF25672PZ-80EH1 Datasheet - Page 8

• Manufacturer Part Number: MT18HTF25672PZ-80EH1
• Description: MODULE DDR2 SDRAM 2GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF25672PZ-80EH1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 800MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef83dadad1
htf18c128_256_512x72pz - Rev. C 1/11 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQs and ODT are disabled
V
DDR2 SDRAM device operating case temper-
ature
Module ambient operating temperature
DD
DD
REF
/V
; V
leakage current; V
2
DDQ
REF
Notes:
input 0V ≤ V
supply voltage relative to V
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
IN
REF
≤ 0.95V; (All other
= Valid V
OUT
SS
≤ V
REF
SS
DDQ
level
IN
≤
;
Command/Address RAS#,
CAS#, WE# S#, CKE, ODT, BA
CK, CK#
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
–250
Min
–0.5
–0.5
–10
–36
–40
–40
–5
0
0
© 2010 Micron Technology, Inc. All rights reserved.
Max
250
2.3
2.3
10
36
85
95
70
85
5
Units
µA
µA
µA
°C
°C
V
V