IPD088N04LG Infineon Technologies, IPD088N04LG Datasheet

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IPD088N04LG

Manufacturer Part Number

IPD088N04LG

Description

SP000354798_N-KANAL POWER MOS_TR_RO

Manufacturer

Infineon Technologies

Datasheets

1.IPD088N04LG.pdf (9 pages)

2.IPD088N04LG.pdf (9 pages)

3.IPD088N04LG.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPD088N04LG

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Current page: 1 of 9
Download datasheet (231Kb)

Rev. 1.0

1)

Type

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

• N-channel, logic level

• Excellent gate charge x R

• Very low on-resistance R

• 100% Avalanche tested

• Pb-free plating; RoHS compliant

• Pb-free plating; RoHS compliant

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Gate source voltage

OptiMOS

Type

Package

Marking

J-STD20 and JESD22

®

3 Power-Transistor

IPD088N04L G

PG-TO252-3

088N04L

2)

j

=25 °C, unless otherwise specified

DS(on)

DS(on)

1)

3)

product (FOM)

for target applications

Symbol Conditions

I

I

I

E

V

D

D,pulse

AS

AS

GS

V

V

V

V

T

T

T

I

D

page 1

C

C

C

GS

GS

GS

GS

=50 A, R

=100 °C

=25 °C

=25 °C

=10 V, T

=10 V, T

=4.5 V, T

=4.5 V,

GS

C

C

=25 Ω

Product Summary

V

R

I

C

=25 °C

=100 °C

=25 °C

D

DS

DS(on),max

Value

350

±20

50

39

47

33

50

10

IPD088N04L G

8.8

40

50

Unit

A

mJ

V

V

mΩ

A

2007-12-06

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