BGA612H6327XT Infineon Technologies, BGA612H6327XT Datasheet

no-image

BGA612H6327XT

Manufacturer Part Number
BGA612H6327XT
Description
RF AMP CHIP SGL GP 6GHZ 3V 4PIN SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGA612H6327XT

Lead Free Status / Rohs Status
Compliant
D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8
B G A 6 12
S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r
S m a l l S i g n a l D i s c r et e s

Related parts for BGA612H6327XT

BGA612H6327XT Summary of contents

Page 1

...

Page 2

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

Page 3

... Previous Version: 2003-11-04 Page Subjects (major changes since last revision) All New Chip Version with integrated ESD protection 5 Electrical Characteristics slightly changed 7-8 Figures updated All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA612 Rev. 2.1, 2008-04-24 ...

Page 4

... Pin connection Description BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration optimized for a typical supply current The BGA612 is based on Infineon Technologies’ B7HF Silicon Germanium technology. Type BGA612 Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet ...

Page 5

Maximum Ratings Table 1 Maximum ratings Parameter Device voltage Device current Current into pin In 1) Input power T Total power dissipation, < 105 °C S Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) ...

Page 6

In Figure 2 Test Circuit for Electrical Characteristics and S-Parameter Data Sheet Bias-T In GND V D GND Out Top View Caution: Device Voltage Electrical Characteristics 135 Bias I D ...

Page 7

Measured Parameters 2 Power Gain | f( 5V 135 , I = 20mA CC Bias ...

Page 8

Device Current parameter in Bias [V] CC Noise figure 5V, R ...

Page 9

Package Information 0.3 Figure 3 Package Outline SOT343 Figure 4 Tape for SOT343 Data Sheet 2 ±0 +0.1 -0.05 +0.1 0.6 4x -0.05 0 Pin 1 2.15 9 Package Information 0.9 ...

Related keywords