SI4731-D60-GU Silicon Laboratories Inc, SI4731-D60-GU Datasheet - Page 5

• Manufacturer Part Number: SI4731-D60-GU
• Description: IC RADIO RX AM/FM/AUX 24SSOP
• Manufacturer: Silicon Laboratories Inc
• Series: -r

Specifications of SI4731-D60-GU

• Frequency: 153kHz ~ 279kHz, 520kHz ~ 1.71MHz, 2.3MHz ~ 26.1MHz, 64MHz ~ 108MHz
• Sensitivity: -
• Data Rate - Maximum: -
• Modulation Or Protocol: AM, FM, SW-LW
• Applications: General Purpose
• Current - Receiving: 18.5mA
• Data Interface: PCB, Surface Mount
• Memory Size: -
• Antenna Connector: PCB, Surface Mount
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
Analog Supply Voltage
Digital and I/O Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Notes:
Analog Supply Voltage
Digital and I/O Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at
2. SSOP devices operate down to 2 V at 25 °C. See Section “4.24. 2 V Operation (SSOP Only)” for details.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si473x devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, GPO3, and DCLK.
4. At RF input pins FMI and AMI.
V
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
A
= 3.3 V and 25 C unless otherwise stated.
3
3
Parameter
4
Parameter
1,2
Symbol
T
V
Symbol
V
T
V
V
V
I
STG
DDRISE
OP
IORISE
IN
IN
A
D
Rev. 1.0
V
V
T
1
A
D
A
Test Condition
Si4730/31/34/35-D60
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
IO
+ 0.3)
2.7
1.62
Min
–20
10
10
2
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
mA
V
C
C
V
V
V
pk
Unit
µs
µs
C
V
V
5