MT46V32M16FN-6 Micron Technology Inc, MT46V32M16FN-6 Datasheet - Page 65

• Manufacturer Part Number: MT46V32M16FN-6
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16FN-6

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

Figure 30:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
Random READ Accesses
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
READ
Col n
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
T0
1. DO n (or x or b or g) = data-out from column n (or column x or column b or column g).
2. BL = 2, BL = 4, or BL = 8 (if BL = 4 or BL = 8, the following burst interrupts the previous).
3. n', x', b', or g' indicate the next data-out following DO n, DO x, DO b, or DO g, respectively.
4. READs are to an active row in any bank.
5. Shown with nominal
CL = 2
Bank,
Col x
Bank,
READ
READ
READ
Bank,
Col x
Col x
T1
T1
T1
CL = 2.5
CL = 3
T2
t
AC,
Bank,
Col b
READ
READ
READ
Bank,
Bank,
Col b
Col b
T2n
T2
T2
t
DQSCK, and
DO
65
n
T2n
T3
DO
DO
n'
n
Bank,
Col g
Bank,
Col g
T3n
READ
READ
Bank,
READ
Col g
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
DO
DO
n'
n
x
T3n
T3n
T4
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
DO
DO
DO
n'
x'
x
T4n
T4
NOP
T4
NOP
NOP
DO
DO
DO
x
x'
b
T4n
T4n
T5
DO
x'
DO
DO
b'
©2000 Micron Technology, Inc. All rights reserved.
b
T5n
T5
T5
NOP
NOP
NOP
DO
Don’t Care
DO
DO
b'
b
g
T5n
T5n
DO
Operations
b'