M29F100BT90M1 Micron Technology Inc, M29F100BT90M1 Datasheet

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M29F100BT90M1

Manufacturer Part Number
M29F100BT90M1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F100BT90M1

Cell Type
NOR
Density
1Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
17/16Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
SO
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
128K/64K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Compliant

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July 2000
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8µs per Byte/Word typical
5 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 2 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F100BT: 00D0h
– Bottom Device Code M29F100BB: 00D1h
Erase Suspend
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)
Figure 1. Logic Diagram
Single Supply Flash Memory
A0-A15
RP
TSOP48 (N)
12 x 20mm
W
G
E
16
V CC
M29F100BB
M29F100BT
V SS
M29F100BB
M29F100BT
44
SO44 (M)
1
15
DQ0-DQ14
DQ15A–1
BYTE
RB
AI02916
1/22

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M29F100BT90M1 Summary of contents

Page 1

... Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29F100BT: 00D0h – Bottom Device Code M29F100BB: 00D1h July 2000 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory TSOP48 ( 20mm Figure 1. Logic Diagram A0-A15 W E ...

Page 2

M29F100BT, M29F100BB Figure 2. TSOP Connections A15 1 A14 A13 A12 A11 A10 M29F100BT M29F100BB Table 1. Signal Names ...

Page 3

Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option 1) T Ambient Operating Temperature (Temperature Range Option 6) A Ambient Operating Temperature (Temperature Range Option 3) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input ...

Page 4

M29F100BT, M29F100BB SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A15). The Address Inputs select the cells in the memory array to ...

Page 5

BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 5 and 6, Bus Operations, for a summary. Typically glitches of less than ...

Page 6

... For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash. COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands ...

Page 7

Table 7. Commands, 16-bit mode, BYTE = V Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 ...

Page 8

M29F100BT, M29F100BB Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command re- quires four Bus Write operations, the final write op- eration latches the address ...

Page 9

Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list ...

Page 10

M29F100BT, M29F100BB STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits ...

Page 11

Figure 4. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The Erase ...

Page 12

M29F100BT, M29F100BB Table 11. AC Measurement Conditions Parameter AC Test Conditions Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform High Speed 3V ...

Page 13

Table 13. DC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL CC2 ...

Page 14

M29F100BT, M29F100BB Table 14. Read AC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

Page 15

Table 15. Write AC Characteristics, Write Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable ...

Page 16

M29F100BT, M29F100BB Table 16. Write AC Characteristics, Chip Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 17

Table 17. Reset/Block Temporary Unprotect AC Characteristics ( °C, – °C or –40 to 125 °C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH ...

Page 18

M29F100BT, M29F100BB Table 18. Ordering Information Scheme Example: Device Type M29 Operating Voltage ± 10% CC Device Function 100B = 1 Mbit (128Kb x8 or 64Kb x16), Boot Block Array Matrix T = Top Boot ...

Page 19

Table 19. Revision History Date July 1999 First Issue New document template Document type: from Preliminary Data to Data Sheet Chip Erase Max. specification added (Table 9) Block Erase Max. specification added (Table 9) Program Max. specification added (Table 9) ...

Page 20

M29F100BT, M29F100BB Table 20. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 0.500 Figure 12. TSOP48 - 48 ...

Page 21

Table 21. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 1.270 0.800 3° Figure 13. SO44 - 44 lead Plastic ...

Page 22

M29F100BT, M29F100BB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...

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