M29F080D55N6 Micron Technology Inc, M29F080D55N6 Datasheet

no-image

M29F080D55N6

Manufacturer Part Number
M29F080D55N6
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F080D55N6

Cell Type
NOR
Density
8Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29F080D55N6
Manufacturer:
ST
0
FEATURES SUMMARY
September 2005
SUPPLY VOLTAGE
– V
ACCESS TIME: 55, 70, 90ns
PROGRAMMING TIME
– 10µs per Byte typical
16 UNIFORM 64Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: F1h
ECOPACK
READ OPERATIONS
Erase Suspend
CC
= 5V ±10% for PROGRAM, ERASE and
®
PACKAGES AVAILABLE
8 Mbit (1Mb x8, Uniform Block)
Figure 1. Packages
5V Supply Flash Memory
TSOP40 (N)
10 x 20mm
SO44 (M)
M29F080D
1/37

Related parts for M29F080D55N6

M29F080D55N6 Summary of contents

Page 1

... LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F1h ® ECOPACK PACKAGES AVAILABLE September 2005 M29F080D 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory Figure 1. Packages TSOP40 ( 20mm SO44 (M) 1/37 ...

Page 2

M29F080D TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

... SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data . . . . . . . . 24 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 14. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 BLOCK ADDRESS TABLE APPENDIX A. BLOCK ADDRESS TABLE Table 15. Block Addresses, M29F080D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 APPENDIX B. COMMON FLASH INTERFACE (CFI M29F080D 3/37 ...

Page 4

M29F080D Table 16. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

SUMMARY DESCRIPTION The M29F080D Mbit (1Mb x8) non-volatile memory that can be read, erased and repro- grammed. These operations can be performed us- ing a single low voltage 5V supply. On power-up the memory defaults to its ...

Page 6

M29F080D Figure 3. TSOP Connections A19 1 A18 A17 A16 A15 A14 A13 A12 M29F080D A11 A10 6/37 Figure 4. SO Connections ...

Page 7

Figure 5. Block Addresses Note: Also see Appendix A, Table 15 for a full listing of the Block Addresses. M29F080D Block Addresses 0FFFFFh 64 KByte 0F0000h 0EFFFFh 64 KByte 0E0000h 0DFFFFh 64 KByte 0D0000h 0CFFFFh 64 KByte Blocks 02FFFFh 64 ...

Page 8

M29F080D SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access ...

Page 9

BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 2, Bus Operations, for a summary. Typical- ly glitches of less than 5ns ...

Page 10

M29F080D COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result ...

Page 11

Unlock Bypass Mode. Chip Erase Command. The Chip Erase com- mand can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase ...

Page 12

... Read CFI Query Command. The Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This 12/37 command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode ...

Page 13

Table 3. Commands Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 555 Block Erase 6+ 555 ...

Page 14

M29F080D STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits in ...

Page 15

Table 5. Status Register Bits Operation Address Program Any Address Program During Erase Any Address Suspend Program Error Any Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block ...

Page 16

M29F080D MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. Exposure to Abso- lute Maximum Rating conditions for extended periods may affect device reliability. These are ...

Page 17

DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

Page 18

M29F080D Table 9. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL CC2 I Supply Current (Standby) CMOS CC3 (1) Supply Current (Program/Erase) I CC4 ...

Page 19

Figure 10. Read AC Waveforms A0-A19 E G DQ0-DQ7 Table 10. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) t Chip Enable Low ...

Page 20

M29F080D Figure 11. Write AC Waveforms, Write Enable Controlled A0-A19 DQ0-DQ7 V CC tVCHEL RB Table 11. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 21

Figure 12. Write AC Waveforms, Chip Enable Controlled A0-A19 DQ0-DQ7 V CC tVCHWL RB Table 12. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write ...

Page 22

M29F080D Figure 13. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 13. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output ...

Page 23

PACKAGE MECHANICAL TSOP40 – 40 lead Plastic Thin Small Outline 20mm, Package Outline TSOP-a Note: Drawing is not to scale. TSOP40 – 40 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 ...

Page 24

M29F080D SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline Note: Drawing is not to scale. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ A ...

Page 25

PART NUMBERING Table 14. Ordering Information Scheme Example: Device Type M29 Operating Voltage ± 10% CC Device Function 080D = 8 Mbit (1Mb x8), Uniform Block Speed ...

Page 26

M29F080D APPENDIX A. BLOCK ADDRESS TABLE Table 15. Block Addresses, M29F080D Size, # Address Range KByte 15 64 0F0000h-0FFFFFh 14 64 0E0000h-0EFFFFh 13 64 0D0000h-0DFFFFh 12 64 0C0000h-0CFFFFh 11 64 0B0000h-0BFFFFh 10 64 0A0000h-0AFFFFh 9 64 090000h-09FFFFh 8 64 080000h-08FFFFh ...

Page 27

... APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

Page 28

M29F080D Table 18. CFI Query System Interface Information Address Data V Logic Supply Minimum Program/Erase voltage CC 1Bh 45h bit bit Logic Supply Maximum Program/Erase voltage CC 1Ch 55h bit ...

Page 29

... Table 19. Device Geometry Definition Address Data 27h 14h Device Size = 2 28h 00h Flash Device Interface Code description 29h 00h 2Ah 00h Maximum number of bytes in multi-byte program or page = 2 2Bh 00h Number of Erase Block Regions within the device. 2Ch 01h It specifies the number of regions within the device containing contiguous Erase Blocks of the same size ...

Page 30

M29F080D Table 20. Primary Algorithm-Specific Extended Query Table Address Data 40h 50h 41h 52h Primary Algorithm extended Query table unique ASCII string “PRI” 42h 49h 43h 31h Major version number, ASCII 44h 30h Minor version number, ASCII 45h 00h Address ...

Page 31

APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the memo- ry. The blocks are protected in groups, refer to Appendix A, Table 15 for details of the Protection ...

Page 32

M29F080D Figure 14. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix A, Table 15. 32/37 START ADDRESS = GROUP ADDRESS ...

Page 33

Figure 15. Programmer Equipment Chip Unprotect Flowchart NO = 1000 FAIL Note: Block Protection Groups are shown in Appendix A, Table 15. START PROTECT ALL GROUPS CURRENT GROUP ...

Page 34

M29F080D Figure 16. In-System Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix A, Table 15. 34/37 START WRITE 60h ADDRESS = GROUP ADDRESS ...

Page 35

Figure 17. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL Note: Block Protection Groups are shown in Appendix A, Table 15. START PROTECT ALL GROUPS CURRENT GROUP = ...

Page 36

M29F080D REVISION HISTORY Table 23. Document Revision History Date Version 03-Dec-2001 -01 First Issue Description of Ready/Busy signal clarified (and Figure 13 modified) 05-Apr-2002 -02 Clarified allowable commands during block erase Clarified the mode the device returns to in the ...

Page 37

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

Related keywords